1SS362 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application ..
1SS362FV ,Switching diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
1SS364 ,DIODE VHF TUNER BAND SWITCH APPLICATIONSISS3641§§264VHF TUNER BAND SWITCH
1SS364 ,DIODE VHF TUNER BAND SWITCH APPLICATIONSAPPLICATIONS Unit in mm0 Small Package.
0 Small Total Capacitance : CT=1.2pF (Max.)
0 Low Serie ..
1SS366 ,VHF, UHF Detector and Mixer Applications Schottky Barrier DiodeFeatures Package Dimensions · Series connection of 2 elements in a very small-sizedunit:mmpackage f ..
1SS367 ,Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Applica ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS362
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type
1SS362 Ultra High Speed Switching Application Small package Low forward voltage : VF = 0.97V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.)
Maximum Ratings (Ta = 25°C) Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Marking Weight: 2.4mg
Unit: mm
