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1SS361FVTOSHIBAN/a880000avaiSwitching diode


1SS361FV ,Switching diodeElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitV I = ..
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1SS361FV
Switching diode
1SS361FV TOSHIBA Diode Silicon Epitaxial Planar Type
1SS361FV

Ultra-High-Speed Switching Applications
z Small package Excellent in forward current and forward voltage
characteristics : VF (3) = 0.9 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.9 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
**: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Electrical Characteristics (Ta = 25°C)

Weight: 1.5 mg (typ.)
Unit: mm
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