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1SS361CTTOSHIBAN/a320000avaiSwitching diode


1SS361CT ,Switching diodeElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitV I = ..
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1SS361CT
Switching diode
1SS361CT TOSHIBA Diode Silicon Epitaxial Planar Type
1SS361CT

Ultra High Speed Switching Application
z Small package Low forward voltage: VF (3) = 0.9 V (typ.) Fast reverse recovery time: trr = 1.6 ns (typ.) Small total capacitance: CT = 0.9 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)

*: Unit rating. Total rating = Unit rating × 1.5
**: Mounted on FR4 board (10 mm × 10 mm × 1 mm (t))
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)

Weight: 0.75 mg (typ.)
Unit: mm
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