1SS361 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS361 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361 Ultra High Speed Switching Application ..
1SS361CT ,Switching diodeElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitV I = ..
1SS361F ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit in mm Small package : 1608 Flat lead Excellent in forward current and forwa ..
1SS361FV ,Switching diodeElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitV I = ..
1SS362 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application ..
1SS362FV ,Switching diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
2560A , Pulse Dialer
2576 ,5-AmpAdjustableRegulatorsElectrical CharacteristicsSymbol Parameter Conditions LM338 UnitsMin Typ MaxV Reference Voltage 3V ..
25AA256I/SN , 256K SPI Bus Serial EEPROM
25AA256-I/SN , 256K SPI Bus Serial EEPROM
25AA256T-I/SN , 256K SPI Bus Serial EEPROM
25C02 , 1K/2K/4K/8K/16K SPI Serial CMOS E2PROM
1SS361
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
1SS361 TOSHIBA Diode Silicon Epitaxial Planar Type
1SS361 Ultra High Speed Switching Application Small package Low forward voltage : VF = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)
Maximum Ratings (Ta = 25°C) Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C) ― ― 1.6
Weight: 2.4mg
Unit in mm
000707EAA2
