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1SS357
SWITCHING DIODES
1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS357 Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-70
Maximum Ratings (Ta = 25°C) Mounted on a glass epoxy circuit board of 20 × 20mm,
pad dimension of 4 × 4mm.
Electrical Characteristics (Ta = 25°C) VF (1)
(Top View) Marking Weight: 0.004g
Unit in mm
000707EAA2
