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1SS307TOSHN/a2448avaiDiode Silicon Epitaxial Planar Type General Puropose Rectifier Applications


1SS307 ,Diode Silicon Epitaxial Planar Type General Puropose Rectifier ApplicationsApplications Unit: mm Low forward voltage : V = 1.0V (typ.) F Low reverse current : I = 0.1nA ..
1SS308 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-74A Low forward voltage : V = 0.92V (typ.) F (3)Fa ..
1SS309 ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationsApplications Unit: mm Small package : SC-74A Low forward voltage : V = 0.90V (typ.) F (3)Fa ..
1SS311 ,Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching
1SS311 ,Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching ApplicationsApplications Unit: mm Low forward voltage : V = 0.94V (typ.) FHigh voltage : V = 400V (min) R ..
1SS312 ,DIODE VHF TUNER BAND SWITCH APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNIT Forwardvo1tagelv ..
250R05L3R3CV4T , MULTI-LAYER HIGH-Q CAPACITORS
2560A , Pulse Dialer
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1SS307
Diode Silicon Epitaxial Planar Type General Puropose Rectifier Applications
1SS307 TOSHIBA Diode Silicon Epitaxial Planar Type
1SS307

General Puropose Rectifier Applications Low forward voltage : VF = 1.0V (typ.) Low reverse current : IR = 0.1nA (typ.) Small total capacitance : CT = 3.0pF (typ.) Small package : SC−59
Maximum Ratings (Ta = 25°C)

Electrical Characteristics (Ta = 25°C)

Marking

Weight: 0.012g
Unit: mm
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