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1S922TRFSCN/a40000avaiHigh Conductance Fast Diode


1S922TR ,High Conductance Fast Diode1S922/1S9231S922/1S923DO-35Color Band Denotes CathodeSmall Signal DiodeAbsolute Maximum Ratings* ..
1S923 ,Small Signal Diode1S922/1S9231S922/1S923DO-35Color Band Denotes CathodeSmall Signal DiodeAbsolute Maximum Ratings* ..
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1S922TR
High Conductance Fast Diode
1S922/1S923 1S922/1S923 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 1S922 150 V RRM 200 V 1S923 I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 4.0 A Storage Temperature Range -65 to +200 °C T stg T Operating Junction Temperature 175 °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 500 mW D Thermal Resistance, Junction to Ambient 300 R °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Conditions Min Max Units V Breakdown Voltage 1S922 150 V I = 5 μA R R 1S923 200 V I = 5 A μ R V Forward Voltage I = 200 mA 1.2 V F F I Reverse Current V = 150 V 100 nA R R 50 1S922 V = 150 V, T = 150°C μA R A 100 V = 200 V nA R 1S923 50 V = 200 V, T = 150°C μA R A 2002 1S922/1S923, Rev. B
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