1S2462 ,GENERAL PURPOSE RECTIFIER APPLICATIONS.TOSHIBA 4iI)TS(ytETE/()pT0y E2? oclllniocri'iesio DUUElHLI-l D r
90977250 TOSHIBA/Wi/Trips/Pi.'! ..
1S2835 ,Silicon Switching DiodeFEATURES
© Low capacitance: Ct ct' 2.5 pF TYP.
q High speed switching: trr Tri' 4.0 ns MAX.
3 ..
1S2835-L ,Silicon Switching DiodeDATA SHEET
SILICON SWITCHING DIODES
1 S2835,1 S2836
HIGH SPEED SWITCHING
SILICON EPITAX ..
1S2835-T1B ,Silicon Switching Diodeapplications including switching,l1mitter, clipper.
6 Double diode configuration assures economi ..
1S2836 ,Silicon switching diodeDATA SHEET
SILICON SWITCHING DIODES
1 S2835,1 S2836
HIGH SPEED SWITCHING
SILICON EPITAX ..
1S2836-L ,Silicon switching diodeFEATURES
© Low capacitance: Ct ct' 2.5 pF TYP.
q High speed switching: trr Tri' 4.0 ns MAX.
3 ..
24LC02B-SN , The Microchip Technology Inc. 24AA02/24LC02B(24XX02*) is a 2 Kbit Electrically Erasable PROM. T
24LC02BT , 2K I2C™ Serial EEPROM
24LC04 , 4K/8K 2.5V I 2 C Serial EEPROMs
24LC04 , 4K/8K 2.5V I 2 C Serial EEPROMs
24LC04 , 4K/8K 2.5V I 2 C Serial EEPROMs
24LC04 , 4K/8K 2.5V I 2 C Serial EEPROMs
1S2462
GENERAL PURPOSE RECTIFIER APPLICATIONS.
TOSHIBA f01SCeE'T'E/t)pToy b? mrly'uocri'iesiio I1l3lilcl31A n T
l. . . ___', ---.- - M _ir, j'wicim "mc:::'' 1st46tr--1S2462 .
9097.250 TosHrBCirWic!RiirTE/peTp), "r-'-'"-'?,'-;''?:-"?)')'; "ifrJesr-. a-,1t
GENERAL PURPOSE RECTIFIER APPLICATIONS,
Unit in mm
FEATURES.. -,;
. High Reverse Voltage t VR=200V(Min.) (182462) -eirrria,i'
. Low Forward Voltage I VF=1.0V(Max.) ' l
. Hermetically Sealded Miniature Glass Package. ,
ffus r ,
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC SYMBOL RATING UNIT i
152460 70 _ g
CATHODE MARK R
Maximum (Peak) ' *
Reverse Voltage 1S2461 VRM 120 ll
' 182462 220 .
182460 50 'si-,':
Reverse Voltage 132461 Va 100 V ' E '
152462 200 '
Maximum (Peak) Forward Current IFM 300 mA
IEDEG DO-ISS
Average Forward Current m 100 mA EIAJ sc-eo
Surge Current (1 sec) IFSM 800 ttth TOSHIBA l-2A1A
Power Dissipationv P 250 mil Weight , 0-143
Junction Temperature Td 175 °C
Storage Temperature Range Tstg -65-175 "c
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage VF IF=100mA - 0.9 1.0 V
IS2460 VR=50V
Reverse Current 152461 IR VRBIOOV - - 1.2 AA
182462 VR=200V
Rectification Efficiency l? f=1MHz, Vi=2Vrm5 (Fig.) 35 - - ,
Total Capacitance CT VR-O, f=lMHz - 5 10 pF
Fig. , TEST CIRCUIT
, = vs-s-Pt?),'.,),,-,,-,
vi=2vrms tt Q 2xvitvrms,)
f--1MHz 1n i''? vow“)
- S = 355xVo(Vdc)(%)
"s. ", _ _ . TOSHIBA CDRPDFIATIDN
"-149--
TOSHIBA 4HyTSCRE:TE/0p'l'01
E? DEDCIU‘WESD 013qu15 1'?
'.-', 9097251) TOSHIBA tDrscRETE/OPTt5) ”“656 -6iiiis" DT'0/~07
, . _ - '-. "’"fi— “7:". ?TFT‘ZJ‘ - "err'-''-.''"-"":''"'-" c" - - - ___ _
i" fS2dtitr-1S2462 -----._-
IF - " CT - VR
FORWARD CURRENT IF (mA)
01 (12 us 04 05 0.6 m 0.3 (19
FORWARD VOLTAGE " (v)
132460; IR - VR
ti IOS
o a 16 l 56 " 72
REVERSE VOLTAGE VR (v)
182462 IR - VR
r, 125
,5 10 100
g 102 "
o :52 64 96 128 160 224 256
REVERSE VOLTAGE Irrt (v)
TOSHIBA CORPORATION
TOTAL CAPACITANCE 91: (pr)
1 3 5 10 30 50 100
REVERSE VOLTAGE VR Cr)
182461 IR - Va
umvunsu: cunamm- 13 (nA)
REVERSE VOLTAGE h, (v)
rowan mssnmnou P (w)
AMBIENT T EMPERAT URE
Ts ('C)
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