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1PS70SB16NXPN/a66000avaiDual Schottky barrier diode


1PS70SB16 ,Dual Schottky barrier diodeApplications• Ultra high-speed switchingLine termination•• Voltage clampingReverse polarity protect ..
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1PS70SB16
Dual Schottky barrier diode
1PS70SB16
Dual Schottky barrier diode17 December 2012 Product data sheet General description

Dual Planar Schottky barrier diode in common anode configuration with an integratedguard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Low forward voltage• Low capacitance• AEC-Q101 qualified Applications Ultra high-speed switching• Line termination• Voltage clamping• Reverse polarity protection Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
forward current - - 200 mA reverse voltage - - 30 V forward voltage IF = 10 mA; Tamb = 25 °C - - 400 mV
NXP Semiconductors 1PS70SB16
Dual Schottky barrier diode Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
K1 cathode (diode 1) K2 cathode (diode 2) A1, A2 common anode 1 2
SC-70 (SOT323)

aaa-004974 K2
A1, A2 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version

1PS70SB16 SC-70 plastic surface-mounted package; 3 leads SOT323 Marking
Table 4. Marking codes
Type number Marking code
[1]

1PS70SB16 7%6
[1] % = placeholder for manufacturing site code Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
reverse voltage - 30 V forward current - 200 mA
IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 - 300 mA
IFSM non-repetitive peak forward
current
tp < 10 ms; Tj(init) = 25 °C - 600 mA
Ptot total power dissipation Tamb < 25 °C - 200 mW junction temperature - 150 °C
Tamb ambient temperature -55 150 °C
NXP Semiconductors 1PS70SB16
Dual Schottky barrier diode
Symbol Parameter Conditions Min Max Unit

Tstg storage temperature -65 150 °C Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device

Rth(j-a) thermal resistancefrom junction to
ambient
in free air [1] - - 625 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per diode

IF = 0.1 mA; Tamb = 25 °C - - 240 mV
IF = 1 mA; Tamb = 25 °C - - 320 mV
IF = 10 mA; Tamb = 25 °C - - 400 mV
IF = 30 mA; Tamb = 25 °C - - 500 mV forward voltage
IF = 100 mA; Tamb = 25 °C - - 800 mV reverse current VR = 25 V; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C - 2 µA diode capacitance VR = 1 V; f = 1 MHz; Tamb = 25 °C - - 10 pF
NXP Semiconductors 1PS70SB16
Dual Schottky barrier diode

006aac829
VF (V)0.0 1.20.80.4
103(mA)
(1)
(1)
(2)
(2) (3)
(3)
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Fig. 1. Forward current as a function of forward
voltage; typical values

aaa-004515
VR (V)0 302010
103(µA)
(1)
(2)
(3)
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Fig. 2. Reverse current as a function of reverse
voltage; typical values

006aac891
VR (V)0 302010(pF)
NXP Semiconductors 1PS70SB16
Dual Schottky barrier diode
12. Package outline

04-11-04Dimensionsinmm
2.22.0 1.351.15
0.40.3 0.250.10 2
Fig. 4. Package outline SC-70 (SOT323)
13. Soldering

solder lands
solder resist
occupied area
solder paste
sot323_fr
2.35 0.6(3×)
0.5(3×)
0.55(3×)
1.33
Dimensionsinmm
Fig. 5. Reflow soldering footprint for SC-70 (SOT323)
NXP Semiconductors 1PS70SB16
Dual Schottky barrier diode

sot323_fw
3.65 2.1
1.425(3×)
4.6(2×)
solder lands
solder resist
occupied area
preferred transportdirection during soldering
Dimensionsinmm
Fig. 6. Wave soldering footprint for SC-70 (SOT323)
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes

1PS70SB16 v.2 20121217 Product data sheet - 1PS70SB10_14_15_16
v.1
Modifications: • The format of this document has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.• Legal texts have been adapted to the new company name where appropriate.• Sections 1 to 3 updated• Section 4 "Quick reference data" added• Section 6 "Ordering information" added• Section 7 "Marking" updated• Table 5 "Limiting values": ambient temperature Tamb and junction temperature Tj updated• Figues 1, 2 and 3 updated• Section 11 "Test information" added• Figure 4: superseded by minimized package outline drawing• Section 13 "Soldering" added Section 14 "Legal information" updated
1PS70SB10_14_15_16v.1 19990426 Product data sheet - -
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