1N914 ,Leaded Silicon Diode Switching
1N914 ,Leaded Silicon Diode Switching
1N914B ,75 V, 500 mW high conductance ultra fast switching diode
1N914B ,75 V, 500 mW high conductance ultra fast switching diode
1N914B ,75 V, 500 mW high conductance ultra fast switching diode
1N914B.TR ,High Conductance Fast Diodeapplications involving pulsed or low duty cycle operations.Thermal Characteristics Symbol Charac ..
24C21 ,2-WireSerialEEPROMFeatures• 2-Wire Serial Interface• Schmitt Trigger, Filtered Inputs For Noise Suppression• DDC1™/ D ..
24C64 ,2-WireSerialEEPROMLogic Diagram SCL Serial ClockWC Write ControlVCCV Supply VoltageCCV GroundSS3Power On Reset: V Loc ..
24FC256T-I/SM , 256K IC CMOS Serial EEPROM
24HST-1041 , 1000 BASE -T MAGNETICS MODULES
24HST1041-2 , 1000 BASE -T MAGNETICS MODULES
24HST1041-2 , 1000 BASE -T MAGNETICS MODULES
1N914
Leaded Silicon Diode Switching
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 100 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 4.0 A T Storage Temperature Range -65 to +200 °C stg Operating Junction Temperature 175 T °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Characteristic Max Units 1N/FDLL 914/A/B / 4148 / 4448 P Power Dissipation 500 mW D Thermal Resistance, Junction to Ambient 300 R °C/W θJA 2002 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448, Rev. B
