1N5399 ,1.5 AMP SILICON RECTIFIERS
1N5399 ,1.5 AMP SILICON RECTIFIERS
1N5399 ,1.5 AMP SILICON RECTIFIERS10-Apr-03 11N5391 thru 1N5399Vishay Semiconductorsformerly General SemiconductorRatings andCharacte ..
1N5399G , GENERAL PURPOSE GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.5A
1N5400 ,3.0 AMP SILICON RECTIFIERS
1N5401 ,3.0 AMP SILICON RECTIFIERSFeatures• Plastic package has Underwriters Laboratories 1.0 (25.4)Flammability Classification 94V-0 ..
24C04 ,4KbitSerialI2CBusEEPROMwithUser-DefinedBlockWriteProtectionST24C04, ST25C04 ST24W04, ST25W0424 Kbit Serial I C Bus EEPROMwith User-Defined Block Write Protect ..
24C04. ,4KbitSerialI2CBusEEPROMwithUser-DefinedBlockWriteProtectionLogic DiagramSELF TIMED PROGRAMMING CYCLEAUTOMATIC ADDRESS INCREMENTINGENHANCED ESD/LATCH UPPERFORM ..
24C04A , The FT24C04A/08A/16A series are 4096/8192/16384 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 512/1024/2048 words of 8 bits (1 byte) each.
24C05LN ,4K-Bit Standard 2-Wire Bus Interface Serial EEPROMFeaturesThe NM24C04/05 devices are 4096 bits of CMOS non-volatile Extended operating voltage 2.7V ..
24C08 ,8K/16K5.0VI2COSerialEEPROMsST24C08, ST25C08 ST24W08, ST25W0828 Kbit Serial I C Bus EEPROMwith User-Defined Block Write Protect ..
24C08A ,2-Wire Serial EEPROMFeatures• Write Protect Pin for Hardware Data Protection – Utilizes Different Array Protection Comp ..
1N5399
1.5 AMP SILICON RECTIFIERS
1N5391-1N5399 1N5391 - 1N5399 Features • 1.5 ampere operation at T = 70°C A with no thermal runaway. • High current capability. • Low leakage. DO-15 COLOR BAND DENOTES CATHODE General Purpose Rectifiers Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units 5391 5392 5393 5394 5395 5396 5397 5398 5399 50 100 200 300 400 500 600 800 1000 V Peak Repetitive Reverse Voltage V RRM I Average Rectified Forward Current, F(AV) 1.5 A .375 " lead length @ T = 75 C ° A I Non-repetitive Peak Forward Surge FSM Current 50 A 8.3 ms Single Half-Sine-Wave Storage Temperature Range -55 to +150 T °C stg T Operating Junction Temperature -55 to +150 C J ° *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 4.8 W D R Thermal Resistance, Junction to Ambient 26 C/W ° θJA Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Device Units 5391 5392 5393 5394 5395 5396 5397 5398 5399 V Forward Voltage @ 1.5 A 1.4 V F I 5.0 Reverse Current @ rated V T = 25°C μA R R A 300 T = 100°C μA A C Total Capacitance T 25 pF V = 4.0 V, f = 1.0 MHz R 2001 1N5391-1N5399, Rev. C
