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1N4150MSHAIN/a2500avaiLeaded Silicon Diode Switching


1N4150 ,Leaded Silicon Diode SwitchingRev. 5, 21-Nov-02 31N4150VISHAYVishay SemiconductorsOzone Depleting Substances Policy StatementIt i ..
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1N4151 ,50 V, 500 mW high speed diode
1N4153 ,50 V, 500 mW high speed diode*7,TOSHIBA 'rr):rlilfRlrrlr/()r''ro?,L'? DEI‘IDHESD Cll3ClcGi!''i1 a r909 259£TQ§HLBAijfSQRETEiégfo ..
2-406549-4 , INVERTED MODULAR JACK ASSEMBLY, 1X1, SHIELDED, PANEL GROUND, LED
240NQ045 ,45V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplications are in switching power supplies, converters, free-waveformwheeling diodes, and reverse ..
241NQ045 ,45V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
241NQ050 ,SCHOTTKY RECTIFIERapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
243NQ080 ,80V 240A Schottky Discrete Diode in a D-67 HALF-Pak packageapplicationsF(AV)are in switching power supplies, converters, free-wheelingwaveformdiodes, and reve ..
24400 , METRIC STANDOFFS AND SPACERS


1N4150
Leaded Silicon Diode Switching
1N4150Document Number 85522
Vishay Semiconductors

www.vishay.com
Fast Switching Diode
Features
Silicon Epitaxial Planar Diode Low forward voltage drop High forward current capability
Applications

High speed switch and general purpose use in com-
puter and industrial applications
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 300 mg
Packaging Codes/Options:

D3/10 K per 13" reel (8 mm tape), 30 K/box
D4/3 K per 7" reel (8 mm tape), 30 K/box
Parts Table
Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance

Tamb = 25 °C, unless otherwise specified
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