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15MQ040IRF N/a100000avai40V 1.7A Schottky Discrete Diode in a SMA package
15MQ040TRN/a2000avai40V 1.7A Schottky Discrete Diode in a SMA package


15MQ040 ,40V 1.7A Schottky Discrete Diode in a SMA packageFeaturesJSurface moutableExtremely low forward voltageImproved reverse blocking voltage capability ..
15MQ040N ,40V 2.1A Schottky Discrete Diode in a SMA packageFeaturesT range - 40 to 150 °CJSurface mountableExtremely low forward voltageImproved reverse block ..
15MQ040NTR ,40V 2.1A Schottky Discrete Diode in a SMA packageApplicationsFSwitching power suppliesMeter protectionV 40 VRRMReverse protection for power input t ..
15MQ040NTRPBF ,SCHOTTKY RECTIFIERApplicationsFSwitching power suppliesMeter protectionV 40 VRRMReverse protection for power input t ..
15MQ040NTRPBF ,SCHOTTKY RECTIFIERFeaturesT range - 40 to 150 °CJSurface mountableExtremely low forward voltageImproved reverse block ..
15MQ040TR ,40V 1.7A Schottky Discrete Diode in a SMA packageApplicationsF(AV)Switching power supplies@ 180° Sinusoidal 1.5 AMeter protectionReverse protection ..
1SS176 , SILICON EPITAXIAL PLANAR DIODE
1SS177 , HIGH SPEED SWITCHING DIODE
1SS181 ,SWITCHING DIODES1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mmUltra High Speed Switching Appli ..
1SS184 ,SWITCHING DIODES1SS184 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Unit: mmUltra High Speed Switching Appli ..
1SS187 ,Signal-Switching Diode1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mmUltra High Speed Switching Appli ..
1SS187 ,Signal-Switching Diode1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mmUltra High Speed Switching Appli ..


15MQ040-15MQ040TR
40V 1.7A Schottky Discrete Diode in a SMA package
International
IéaR Rectifier
PD-2.292 rev. A 12/97
15MQO4O
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics 15MQO40 U nits
IHAV) @180°Rectangular 1.7 A
@180°Sinusoidal 1.5 A
VRWM 40 A
IFSM @50Hz 60 A
VF @60Hz 64 V
T J range -40to 125 ''C
1.5 Amp
Description/Features
The 1 5MQO40 is a 1 .5A Schottky rectiferand is designed to be
used for low-power applications where a reverse voltage of 40
volts is ancountered and surface mounting is required.
Applications
. Switching powersupplies
o Meterprotection
. Reverse protection for power input to PC board circuits
. Battery isolation and charging
. Lowthreshold voltage diode
. Free-wheeling or by-pass diode
. Low voltage clamp
Features
. Surface moutable
. Extremely low forward voltage
. Improved reverse blocking voltage capability relative
to other Schottkys of similar size
. Compact size
CASE STYLE AND DIMENSIONS
2.25 (0.089)
1.85 (0.073)
4.7 (0.135)
4.3 [0.169)
2.8 (0.110)
2.4 (0.094)
d 7 i0 I85:
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I 4 3 (0 IW,' Ma m-IA-o AHUD:
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5 C til '9/t
2 25A) 051
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(so io Cl/9) _ en {0 arm
MIN - _ I N In 0471
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in main
- _ J (00;5'l
l '/ in Iasy n q fil 0351
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{D m 2 o i3079| so Ct) um uuwm
Outline D - 64
Dimensions in millimeters and inches

15MQO40 International
PD-2.292 rev.A 12/97 IDR Rectifier
Voltage Ratings
Part number 15MQO40
v,, Max. DC Reverse Voltage (V)
a,, Max. Working Peak Reverse Voltage (V)
Electrical Specifications
Parameters 15MQ Units Conditions
IHAV) Max.AverageOutputCurrent 1.7 A 180°conduction,rectangularwaveform
1.5 A 180°conduction,sinusoidalwaveform
IFSM Max.PeakOneCycIeNon-Repetitive 60 A 50Hzhalfcyclesinewaveor6msrectangularpulse
SurgeCurrent 64 A 60Hzhalfcyclesinewaveor5msrectangularpulse
I/m Max.PeakForwardVoltage 0.55 V TJ=25°C atrateleW)
l,, Max.dCReverseCurrent 5.0 mA TJ=25°C VR=ratedVR
IRS, Max.PeakReverseCurrent 50 mA TC=125°C VR=ratedVR
c, TypicalJunctionCapacitance 70 pF TC=25°C VR=1OVDC 1Mhztestsignal
ThermaI-Mechanical Specifications
Parameters 15MQ Units Conditions
T Max.OperatingJunctionTemperature -40to125 (
Tstg Max.StorageTemperatureRange -40to125 ''C
RmJA Max.ThermaIResistanceJunction 150 ''CA/V
toAmbient
wt ApproximateWeight 0.07(0.026) g(oz.)
CaseStyle D-64
2
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