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15ETH06IRN/a2550avai600V 15A HyperFast Discrete Diode in a TO-220AC package
15ETH06-1 |15ETH061IRN/a50avai600V 15A HyperFast Discrete Diode in a TO-262 package
15ETH06SIRN/a10avai600V 15A HyperFast Discrete Diode in a D2-Pak (UltraFast) package


15ETH06 ,600V 15A HyperFast Discrete Diode in a TO-220AC packageBulletin PD-20749 rev. D 08/0115ETH0615ETH06S15ETH06-1Hyperfast Rectifier
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15ETH06-15ETH06-1-15ETH06S
600V 15A HyperFast Discrete Diode in a TO-220AC package
International
ISZR Rectifier
Hyperfast Rectifier
Features
. Hyperfastfast Recovery Time
. Low Forward Voltage Drop
. Low Leakage Current
. 175°C Operating Junction Temperature
. Single Die Center Tap Module
Description) Applications
Bulletin PD-20749 rev.D 08/01
15ETH06
15ETHO6S
15ETH06-1
trr = 22ns typ.
|F(AV) = 15Amp
VR = 600V
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop,
Hyperfast recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section ofSMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters Max Units
VRRM Peak Repetitive Peak Reverse Voltage 600 V
IHAV) Average Rectified Forward Current @ TC = 140°C 15 A
IFSM Non Repetitive Peak Surge Current @ T J = 25°C 120
IFM Peak Repetitive Forward Current 30
T J, Tsrs Operating Junction and Storage Temperatures - 65 to 175 ''C
Case Styles
15ETH06 15ETH06S 15ETH06-1
iiii,llt K 1ijji1 1
N -. u. u.
M‘ I, -u,u'
Base Base 2
Cathode Cathode
1 l 3 Ol /, 3 i 1 3
Cathode Anode NIO Anode N/C Anode
TO-220AC D2PAK TO-262

International
15ETH06, 15ETH06S, 15ETH06-1
Bulletin PD-20749 rev. D 08101 IEER Rectifier
Electrical Characteristics ti) TJ = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
VBR, v, Breakdown Voltage, 600 - - V IR = 100pA
Blocking Voltage
VF Forward Voltage - 1.8 2.2 V IF = 15A, To = 25''C
- 1.3 1.6 V IF =15A,TJ = 150°C
IR Reverse Leakage Current - 0.2 50 pA VR = VR Rated
- 30 500 HA To = 150°C, VR = VR Rated
CT Junction Capacitance - 20 - pF VR = 600V
Ls Series Inductance - 8.0 - nH Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics
@ T = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
trr Reverse Recovery Time - 22 30 ns IF = 1A, diF/dt = 100A/ps, VR = 30V
- 28 35 IF = 15A, diF/dt = 100Alps, VR = 30V
- 29 - To = 25°C
- 75 - To = 125°C
0 IF = 15A
IRRM Peak Recovery Current - 3.5 - A TJ - 25 C dir/dt = 200A/ps
- 7 - Tu = 125°C VR = 390V
Qrr Reverse Recovery Charge - 57 - nC To = 25°C
- 300 - To = 125°C
t Reverse Recove Time - 51 - ns
rr ry IF-- 15A
IRRM Peak Recovery Current - 20 - A T J = 125°C diF ldt = 800Alps
Orr Reverse Recovery Charge - 580 - nC VR = 390V
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
To Max. Junction Temperature Range - - 175 "C
TStg Max. Storage Temperature Range - 65 - 175
Rthoc Thermal Resistance, Junction to Case Per Leg - 1.0 1.3 "CAN
RthJA (D Thermal Resistance, Junction to Ambient Per Leg - - 70
Rmcs © Thermal Resistance, Case to Heatsink - 0.5 -
Weight - 2.0 - g
- 0.07 - (oz)
Mounting Torque 6.0 - 12 Kg-cm
5.0 - 10 |bf.in
co Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased

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