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15ETH06FP |15ETH06FPIR N/a3000avai600V 15A Hyperfast Discrete Diode in a TO-220 FullPack package


15ETH06FP ,600V 15A Hyperfast Discrete Diode in a TO-220 FullPack packageApplicationsState of the art Hyperfast recovery rectifiers designed with optimized performance o ..
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15ETH06FP
600V 15A Hyperfast Discrete Diode in a TO-220 FullPack package
Bulletin PD-20765 rev.A 02/04
International
TOR, Rectifier 15ETH06FP
Hyperfast Rectifier
Features
. Hyperfast Recovery Time trr - 22ns typ.
. Low Forward Voltage Drop
. Low Leakage Current |F(AV) - 1 5Amp
. 175°C Operating Junction Temperature =
. Fully Isolated package (VINS = 2500 VRMS) VR 600V
. UL E78996 approved “1
Description/Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop,
Hyperfast recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section ofSMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters Max Units
VRRM Peak Repetitive Peak Reverse Voltage 600 V
IHAV) Average Rectihed Forward Current @ TC = 80°C 15 A
IFSM Non Repetitive Peak Surge Current @ T, = 25°C 180
IFM Peak Repetitive Forward Current 30
T J, TSTG Operating Junction and Storage Temperatures - 65 to 175 (
Case Styles
15ETH06FP
Cathode Anode
TO-220 FULLPACK
1
15ETH06FP
Bulletin PD-20765 rev.A 02/04
International
TOR Rectifier
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
VBR, v, Breakdown Voltage, 600 - - V IR = 100pA
Blocking Voltage
VF Forward Voltage - 1.8 2.2 IF = 15A, T: = 25°C
- 1.3 1.6 |F=15A,TJ= 150°C
IR Reverse Leakage Current - 0.2 50 pA VR = VR Rated
- 30 500 pA TJ = 15ty'C, VR = VR Rated
CT Junction Capacitance - 20 - pF VR = 600V
Ls Series Inductance - 8.0 - nH Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics
@ Tc = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
trr Reverse Recovery Time - 22 30 ns IF = 1A, diF/dt = 100/Vps, VR = 30V
- 28 35 IF = 15A, diF/dt = 100Alps, VR = 30V
- 29 - T J = 25°C
- 75 - T: = 125°C
IF-- 15A
IRRM Peak Recovery Current - 3.5 - A TJ = 25''C dir/dt-- 200Alps
- 7 - TJ = 125°C VR = 390V
Qrr Reverse Recovery Charge - 57 - nC T: = 25''C
- 300 - T: = 125°C
trr Reverse Recovery Time - 51 - ns IF = 15A
IRRM Peak Recovery Current - 20 - A T J = 125°C div: ldt = 800Alps
G, Reverse Recovery Charge - 580 - nC VR = 390V
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
To Max. Junction Temperature Range - - 175 ''C
Tsig Max. Storage Temperature Range - 65 - 175
Rthoc Thermal Resistance, Junction to Case Per Leg - 3.0 3.5 °C/W
RNA (D Thermal Resistance, Junctionto Ambient Per Leg - - 70
Rmcs © Thermal Resistance, Case to Heatsink - 0.5 -
Weight - 2.0 - g
- 0.07 - (oz)
Mounting Torque 6.0 - 12 Kg-cm
5.0 - 10 |bf.in
co Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased
2
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