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10MQ100NIRN/a35000avai100V 1.5A Schottky Discrete Diode in a SMA package
10MQ100NTRIRN/a35000avai100V 1.5A Schottky Discrete Diode in a SMA package


10MQ100N ,100V 1.5A Schottky Discrete Diode in a SMA packageapplications are in disk drives,switching power supplies, converters, free-wheeling diodes, battery ..
10MQ100NPBF ,SCHOTTKY RECTIFIERapplications are in disk drives,switching power supplies, converters, free-wheeling diodes, battery ..
10MQ100NPBF ,SCHOTTKY RECTIFIERBulletin PD-20520 rev. M 07/0410MQ100NSCHOTTKY RECTIFIER 2.1 AmpI = 2.1AmpF(AV)V = 100VRMajor ..
10MQ100NTR ,100V 1.5A Schottky Discrete Diode in a SMA packageBulletin PD-20520 rev. L 11/0310MQ100NSCHOTTKY RECTIFIER 2.1 AmpSMAMajor Ratings and Characte ..
10MQ100NTRPBF ,SCHOTTKY RECTIFIERBulletin PD-20520 rev. M 07/0410MQ100NSCHOTTKY RECTIFIER 2.1 AmpI = 2.1AmpF(AV)V = 100VRMajor ..
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10MQ100N-10MQ100NTR
100V 1.5A Schottky Discrete Diode in a SMA package
Bulletin PD-20520 rev.L 11/03
International
tttiR Rectifier
SCHOTTKY RECTIFIER
1OMQ1OON
2.1 Amp
Major Ratings and Characteristics Description/ Features
. . . The 10MQ100N surface mount Schottky rectifier has been de-
Characteristics 10MQ1 OON Units signed for applications requiring low forward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
I DC 2 1 A switching ptovversupplies,converters,ttee-uh1eeling diodes,battery
F ' charging, and reverse battery protection.
V 100 V . Small foot print, surface mountable
RRM . Low forward voltage drop
. High frequency operation
IFSM @tp= 5ps sine 120 A . Guard ring for enhanced ruggedness and long term
reliability
VF @1.5Apk.TJ=125°C 0.68 V
T: range -55 to 150 ''C
Device Marking: IR1d CATHODE ANODE
50 (.098)
90 (.114)
(D POLARITY (ii) PART NUMBER
1.40 (.055) Ci) l
1.60 (.062)
4.00 (.157) _
4.60 (.181)
2.10 MAX.
152(006 C085 MAX. )
BM (.012) 1.47 MIN.
-uL" (.058 MIN. )
2.00 (.078)
2.44 (.096) 7
4; @7103 (. 004) J
0.76 (osmmi .203 (, 008) 1 27 MIN.
1.52 (.050) 4. 80(. 188) (.050 MIN.) ,
5.28 (.208)
5.53 (.218)
SOLDERING PAD
Outline SMA Similar to D-64
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994

10MQ100N
Bulletin PD-20520 rev. L 11/03
International
TOR Rectifier
Voltage Ratings
Part number 10MQ1OON
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 100
Absolute Maximum Ratings
Parameters 10MQ Units Conditions
IHAV) Max. Average Forward Current 1.5 A 50% duty cycle @ TL: 126 "C, rectangularwave form.
* See Fig. 4 On PC board 9mm2island(.013mmthickoopperpad area)
IFSM Max. Peak One Cycle Non-Repetitive 120 5ps Sine or 3ps Rect. pulse Following any rated
A load condition and
Surge Current * See Fig. 6, Ts-- 25°C 30 10ms Sine or6ms Rect. pulse with rated VRRM applied
EAS Non-Repetitive Avalanche Energy 1.0 mJ T, = 25 °C, IAS; = 0.5A, L = 8mH
|AR Repetitive Avalanche Current 0.5 A
Electrical Specifications
Parameters 10MQ Units Conditions
Vo, Max. Forward Voltage Drop (1) 0.78 V © IA T, = 25 "C
* See Fig. 1 0.85 V @ 1.5A
0.63 V @ IA T, =125 ''C
0.68 V @ 1.5A
IRS, Max. Reverse Leakage Current (1) 0.1 mA T, = 25 "C VR = rated VR
* See Fig. 2 1 mA T, = 125 ''C
VF(TO) Threshold Voltage 0.52 V T: = T, max.
rt Forward Slope Resistance 78.4 mo
c, Typical Junction Capacitance 38 pF VR = lol/oc, T: = 25°C, test signal = 1Mhz
Ls Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps
(Rated VR)
(1) Pulse \Mdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 10MQ Units Conditions
T J Max.Junction Temperature Range(*) -55tol50 "C
Tstg Max. Storage Temperature Range - 55 to 150 ''C
RthJA Max. Thermal Resistance Junction 80 "C/W DC operation
to Ambient
wt Approximate Weight 0.07(0.002) g(oz.)
Case Style SMA Similar D-64
Device Marking IRIJ
C) det 1 . . . . .
. < . thermal runaway condition for a diode on its own heatsink
dTj Rth(j-a)

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