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10MQ100IRF N/a100001avaiSCHOTTKY RECTIFIER
10MQ100NPBFVISHAYN/a8675avaiSCHOTTKY RECTIFIER
10MQ100NPBFIRN/a35000avaiSCHOTTKY RECTIFIER
10MQ100NTRPBFVISHAYN/a700avaiSCHOTTKY RECTIFIER


10MQ100 ,SCHOTTKY RECTIFIERFeaturesThe 10MQ100N surface mount Schottky rectifier has been de-Characteristics 10MQ100N Unitssig ..
10MQ100N ,100V 1.5A Schottky Discrete Diode in a SMA packageapplications are in disk drives,switching power supplies, converters, free-wheeling diodes, battery ..
10MQ100NPBF ,SCHOTTKY RECTIFIERapplications are in disk drives,switching power supplies, converters, free-wheeling diodes, battery ..
10MQ100NPBF ,SCHOTTKY RECTIFIERBulletin PD-20520 rev. M 07/0410MQ100NSCHOTTKY RECTIFIER 2.1 AmpI = 2.1AmpF(AV)V = 100VRMajor ..
10MQ100NTR ,100V 1.5A Schottky Discrete Diode in a SMA packageBulletin PD-20520 rev. L 11/0310MQ100NSCHOTTKY RECTIFIER 2.1 AmpSMAMajor Ratings and Characte ..
10MQ100NTRPBF ,SCHOTTKY RECTIFIERBulletin PD-20520 rev. M 07/0410MQ100NSCHOTTKY RECTIFIER 2.1 AmpI = 2.1AmpF(AV)V = 100VRMajor ..
17808 , Three-Terminal Regulator
17808 , Three-Terminal Regulator
17809 , Three-Terminal Regulator
17810 , Three-Terminal Regulator
17812 , Three-Terminal Regulator
17815 , Three-Terminal Regulator


10MQ100-10MQ100NPBF-10MQ100NTRPBF
SCHOTTKY RECTIFIER
International
IezR Red
Bulletin PD-20520 rev.M 07/04
1OMQ1OON
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
2.1 Amp
|F(AV) = 2.1Amp
VR = 100V
Description] Features
. . . The 10MQ1OON surface mount Schottky rectifier has been de-
Characteristics 10MQ1 DON Units signed for applications requiring low forward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
I DC 2 1 A switdingpowersupplies,corwerters,fee-vvheelingdiMes, battery
F . charging, and reverse battery protection.
V 100 V . Small foot print, surface mountable
RRM . Low forward voltage drop
. . High frequency operation
IFSM @tp = 5 ys sme 120 A . Guard ring for enhanced ruggedness and long term
reliability
VF @1.5Apk, TJ=125°C 0.68 V
To range -55 to 150 ''C
Case Styles
10MQ100N
Cathode Anode

10MQ100N
Bulletin PD-20520 rev. M 07/04
International
TOR Rectifier
Voltage Ratings
Part number 10MQ1OON
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 100
Absolute Maximum Ratings
Parameters 10MQ Units Conditions
IHAV) Max. Average Forward Current 1.5 A 50% duty cycle @ TL: 126 "C, rectangularwave form.
* See Fig. 4 On PC board 9mm2island(.013mmthickoopperpad area)
IFSM Max. Peak One Cycle Non-Repetitive 120 5ps Sine or 3ps Rect. pulse Following any rated
A load condition and
Surge Current * See Fig. 6, Ts-- 25°C 30 10ms Sine or6ms Rect. pulse with rated VRRM applied
EAS Non-Repetitive Avalanche Energy 1.0 mJ T, = 25 °C, IAS; = 0.5A, L = 8mH
|AR Repetitive Avalanche Current 0.5 A
Electrical Specifications
Parameters 10MQ Units Conditions
Vo, Max. Forward Voltage Drop (1) 0.78 V © IA T, = 25 "C
* See Fig. 1 0.85 V @ 1.5A
0.63 V @ IA T, =125 ''C
0.68 V @ 1.5A
IRS, Max. Reverse Leakage Current (1) 0.1 mA T, = 25 "C VR = rated VR
* See Fig. 2 1 mA T, = 125 ''C
VF(TO) Threshold Voltage 0.52 V T: = T, max.
rt Forward Slope Resistance 78.4 mo
c, Typical Junction Capacitance 38 pF VR = lol/oc, T: = 25°C, test signal = 1Mhz
Ls Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps
(Rated VR)
(1) Pulse \Mdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 10MQ Units Conditions
T J Max.Junction Temperature Range(*) -55tol50 "C
Tstg Max. Storage Temperature Range - 55 to 150 ''C
RthJA Max. Thermal Resistance Junction 80 "C/W DC operation
to Ambient
wt Approximate Weight 0.07(0.002) g(oz.)
Case Style SMA Similar D-64
Device Marking IRIJ
C) det 1 . . . . .
. < . thermal runaway condition for a diode on its own heatsink
dTj Rth(j-a)

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