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10BQ060IRN/a55000avai60V 1A Schottky Discrete Diode in a SMB package
10BQ060IRF N/a100000avai60V 1A Schottky Discrete Diode in a SMB package
10BQ060TRIRN/a35000avai60V 1A Schottky Discrete Diode in a SMB package


10BQ060 ,60V 1A Schottky Discrete Diode in a SMB packageBulletin PD-2.438 rev. F 03/0310BQ060SCHOTTKY RECTIFIER 1 AmpSMBMajor Ratings and Characteris ..
10BQ060 ,60V 1A Schottky Discrete Diode in a SMB packageapplications are in diskI Rectangular waveform 1.0 AF(AV) drives, switching power supplies, conver ..
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10BQ060TR ,60V 1A Schottky Discrete Diode in a SMB packageFeaturesThe 10BQ060 surface-mount Schottky rectifier has beenCharacteristics 10BQ060 Unitsdesigned ..
10BQ100TR ,100V 1A Schottky Discrete Diode in a SMB packageapplications are in diskI Rectangular waveform 1.0 Adrives, switching power supplies, converters, f ..
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10BQ060-10BQ060TR
60V 1A Schottky Discrete Diode in a SMB package
International
Tiait, Rectifi
Bulletin PD-2.438 rev.F 03/03
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Description/ Features
. . . The 1080060 surface-mount Schottky rectifier has been
Characteristics 10Bt2060 Units designed for applications requiring low forward drop and very
I R t I f 1 0 A small foot prints on PC boards. Typical applications are in disk
F(AV) ec angu ar wave orm . drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
VRRM 60 V . Small foot print, surface mountable
. Low forward voltage drop
IFSM @tp=5pssine 700 A . High frequency operation
. Guard ring for enhanced ruggedness and long term
VF @1.0Apk, TJ=125°C 0.57 V reliability
TJ range -55 to 150 "C
Device Marking: IRIH ATH DE I ANODE
2.15 (,085):I:[ j 3.80 (.150) , ® Ci) ,
1.80 (.071) 3.30 (.130)
4.70 (.185) (D POLARITY CO PART NUMBER
4.10 (.161) l
2.5 TYP.
fififl C098 TYP.) SOLDERING PAD
2.40(.094) 7
1.90 (.075) -A"
f 0.30 (.012) Jg 1
(1132 5.335%) : ,FM (.006) 2.0 TYP. 4 F
_ . 5.60 .220 (.079 TYP.)
5.00 E197; 4.2 (A65)
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
1
1OBQ060
Bulletin PD-2.438 rev.F 03103
International
TOR Rectifier
Voltage Ratings
Part number 1080060
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 60
Absolute Maximum Ratings
Parameters 1080 Units Conditions
IFW) Max.Average Forward Current 1.0 A 50% duty cycle@TL= 103°C, rectangular waveform
|FSM Max. PeakOne Cycle Non-Repetitive 700 A 5ps Sine or Bus Rect. pulse Following any rated
load condition and
Surge Current 42 10ms Sine or 6ms Rect. pulse with rated VRRMapplied
EAS Non-Repetitive Avalanche Energy 2.0 mJ TJ=25°C,IAS=1A,L=4mH
I AR Repetitive Avalanche Current 1.0 A Current decaying linearlytozeroin1 psec
Frequencylimited by T, maxNa=1.5xVr typical
Electrical Specifications
Parameters 1080 Units Conditions
VFM Max. Forward Voltage Drop (1) 0.6 V @ 1A T, = 25 "C
* See Fig. 1 0.76 V @ 2A
0.57 V @ 1A T, =125 "C
0.69 V @ 2A
I Max. Reverse Leaka e Current 1 0.1 mA T = 25 "C
RM g ( ) J v,, = rated VR
* See Fig. 2 5.0 mA T, = 125 °C
c, Typical Junction Capacitance 62 pF VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C
Ls Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge 10000 VI us
(Rated VR)
(1) Pulse Width < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 1080 Units Conditions
T J Max.Junction Temperature Range (*) -55 to 150 °C
Tsig Max. Storage Temperature Range -55 to150 "C
ML Max. Thermal Resistance Junction 36 "C/W DC operation
to Lead C”)
R"LIA Max.ThermaI Resistance Junction 80 uCNV
to Ambient
wt Approximate Weight 0.10(0.003) g(oz.)
Case Style SMB Similar DO-214AA
Device Marking IRIH
(*) dPtot < 1
dT] Rth(j-a)
co Mounted 1 inch square PCB
thermal runaway condition for a diode on its own heatsink

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