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10BQ040IRN/a2460avai40V 1A Schottky Discrete Diode in a SMB package
10BQ040TRIRN/a35000avai40V 1A Schottky Discrete Diode in a SMB package


10BQ040TR ,40V 1A Schottky Discrete Diode in a SMB packageFeaturesThe 10BQ040 surface-mount Schottky rectifier has been de-Characteristics 10BQ040 Unitssigne ..
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10BQ040-10BQ040TR
40V 1A Schottky Discrete Diode in a SMB package
International
Tiallit, Rectifi
Bulletin PD-2.397 rev. F 03/03
10BQ040
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics 1OBQO40 Units
IHAV) Rectangular waveform 1.0 A
VRRM 40 V
IFSM @tp=5pssine 430 A
VF @1.0Apk,TJ=125°C 0.49 V
TJ range -55 to150 "C
Description! Features
The 1OBQ040 surface-mount Schottky rectifier has been de-
signed for applications requiring low forward drop and very
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
. Small foot print, surface mountable
. Low forward voltage drop
. High frequency operation
. Guard ring for enhanced ruggedness and long term
reliability
2.40 (.094)
1.90 (.075)
1.30 (.051
0.76 (.030)
2.15 (.085)
1.80 (.071)
Device Marking: IRIF
CATHODE ANODE
C) Ci)
4.70 (.185)
4.10 (.161)
5.60 (.220)
5.00 (.197)
C) POLARITY Ci) PART NUMBER
2.5 TYP, SOLDERING PAD
(.098 TYP.)
0.30 (.012) _3, li., c)
0.15 (005) 2.0 TYP. -oi
(.079 TYP.) 4.2 (.165
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994

10BQ040
Bulletin PD-2.397 rev.F 03103
International
IEZR Rectifier
Voltage Ratings
Part number 1OBQ040
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 40
Absolute Maximum Ratings
Parameters 1080 Units Conditions
IHAV) Max.Average Forward Current 1.0 A 50% duty cycle@TL=112°C,rectangular waveform
IFSM Max.PeakOneCycieNon-Repetitive 430 A 5ps Sine or3ps Rect. pulse Following any rated
load condition and
Surge Current 45 10ms Sine or 6ms Rect. pulse with rated VRRMapplied
EAS Non- Repetitive Avalanche Energy 3.0 mJ Tr--25 "C, |AS= 1A, L= 6mH
I AR Repetitive Avalanche Current 1.0 A Current decaying Iinearlytozeroin1 usec
Frequency limited by T, max. Va = 1.5 er typical
Electrical Specifications
Parameters 1080 Units Conditions
Vo, Max. Forward Voltage Drop (1) 0.53 V © IA T, = 25 ''C
* See Fig. 1 0.70 V @ 2A
0.49 V © IA To-- 125°C
0.64 V @ 2A
ru, Max. Reverse Leakage Current (1) 0.1 mA T, = 25 'C VR = rated v,,
*See Fig.2 4 mA TJ=125°C
c, Typical Junction Capacitance 80 pF VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C
LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge 10000 VI us
(Rated VR)
(1) Pulse VWdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 1080 Units Conditions
T J Max.Junction Temperature Range (*) -55 to 150 "C
Tstg Max. Storage Temperature Range -55 to 150 "C
thJL Max.Thermal Resistance Junction 36 'CIW DC operation
to Lead (**)
RthJA Max.Thermal Resistance Junction 80 "C/W
to Ambient
wt Approximate Weight 0.10(0.003) g(oz.)
Case Style SMB Similar DO-214AA
Device Marking IRIF
(*) dPtot < 1
dT] Rth(j-a)
C') Mounted 1 inch square PCB
thermal runaway condition for a diode on its own heatsink

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