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|FQU5N60CTU from FSC, Fairchild Semiconductor 4343pcs,600V N-Channel Advance QFET C-Series|
FeaturesThese N-Channel enhancement mode power field effect 2.8A, 600V, R = 2.5Ω @V = 10 VDS(on) GStransistors are produced using Fairchild’s proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology.D!!!!!!!!D● ● ● ● ● ● ● ●◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲● ● ● ● ● ● ● ●G!!!!!!!!● ● ● ● ● ● ● ●D-PAK I-PAKGSFQD Series FQU SeriesGS D!!!!!!!!SAbsolute Maximum Ratings T = 25°C unless otherwise notedCSymbol Parameter FQD5N60C / FQU5N60C UnitsVDrain-Source Voltage 600 VDSSI - Continuous (T = 25°C)Drain Current 2.8 AD C- Continuous (T = 100°C)1.8 ACI (Note 1)Drain Current - Pulsed 11.2 ADMVGate-Source Voltage ± 30 VGSSE Single Pulsed Avalanche Energy (Note 2) 210 mJASIAvalanche Current (Note 1) 2.8 AARE Repetitive Avalanche Energy (Note 1) 4.9 mJARdv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/nsPower Dissipation (T = 25°C)*2.5 WAPPower Dissipation (T = 25°C) 49 WDC- Derate above 25°C 0.39 W/°CT , TOperating and Storage Temperature Range -55 to +150 °CJ STGMaximum lead temperature for soldering purposes,T300 °CL1/8" from case for 5 secondsThermal Characteristics Symbol Parameter Typ Max UnitsR Thermal Resistance, Junction-to-Case - 2.56 °C/WθJCRThermal Resistance, Junction-to-Ambient* - 50 °C/WθJARThermal Resistance, Junction-to-Ambient - 110 °C/WθJA* When mounted on the minimum pad size recommended (PCB Mount)2003 Fairchild Semiconductor Corporation Rev. A, October 2003FQD5N60C / FQU5N60C
|FQU5N60CTU ,600V N-Channel Advance QFET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 2.8A, 600V, R = 2.5Ω @V = 10 VDS(on) ..|
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