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|FQU12P10 from Fairchild, Fairchild Semiconductor 301pcs , TO-251,100V P-Channel MOSFET|
applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontrol.DDGI-PAKD-PAKGSFQD Series FQU SeriesGS DSAbsolute Maximum Ratings T = 25°C unless otherwise notedCSymbol Parameter FQD12P10 / FQU12P10 UnitsV Drain-Source Voltage -100 VDSSI - Continuous (T = 25°C)Drain Current -9.4 AD C- Continuous (T = 100°C)-6.0 ACI (Note 1)Drain Current - Pulsed -37.6 ADMVGate-Source Voltage ± 30 VGSSE (Note 2)Single Pulsed Avalanche Energy 370 mJASIAvalanche Current (Note 1) -9.4 AARE (Note 1)Repetitive Avalanche Energy 5.0 mJARdv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/nsPower Dissipation (T = 25°C) *2.5 WP ADPower Dissipation (T = 25°C)50 WC- Derate above 25°C 0.4 W/°CT , TOperating and Storage Temperature Range -55 to +150 °CJ STGMaximum lead temperature for soldering purposes,T 300 °CL1/8! from case for 5 secondsThermal Characteristics Symbol Parameter Typ Max UnitsRThermal Resistance, Junction-to-Case -- 2.5 °C/WθJCRThermal Resistance, Junction-to-Ambient * -- 50 °C/WθJARThermal Resistance, Junction-to-Ambient -- 110 °C/WθJA* When mounted on the minimum pad size recommended (PCB Mount)2002 Fairchild Semiconductor Corporation Rev. B, August 2002FQD12P10 / FQU12P10
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