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|FQT3P20TF from FAIRCHIL, Fairchild Semiconductor 12350pcs , SOT223,200V P-Channel QFET|
|FQT3P20TF from FAIRCHILD, Fairchild Semiconductor 90pcs , SOT223,200V P-Channel QFET|
General DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.• -0.67A, -200V, R = 2.7Ω @V = 10 VDS(on) GSThis advanced technology has been especially tailored to• Low gate charge ( typical 6.0 nC)minimize on-state resistance, provide superior switching• Low Crss ( typical 7.5 pF)performance, and withstand high energy pulse in the• Fast switchingavalanche and commutation mode. These devices are well• Improved dv/dt capabilitysuited for high efficiency switching DC/DC converters.S!!!!!!!!D● ● ● ● ● ● ● ●G!!!! ● ● ● ● ● ● ● ●!!!!▶ ▶ ▶ ▶ ▶ ▶ ▶ ▶▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲S● ● ● ● ● ● ● ●GSOT-223!!!!!!!!FQT SeriesDAbsolute Maximum Ratings T = 25°C unless otherwise notedCSymbol Parameter FQT3P20 UnitsV Drain-Source Voltage -200 VDSSI - Continuous (T = 25°C)Drain Current -0.67 AD C- Continuous (T = 70°C)-0.53 ACI (Note 1)Drain Current - Pulsed -2.7 ADMVGate-Source Voltage ± 30 VGSSE (Note 2)Single Pulsed Avalanche Energy 150 mJASIAvalanche Current (Note 1) -0.67 AARE (Note 1)Repetitive Avalanche Energy 0.25 mJARdv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/nsP Power Dissipation (T = 25°C)2.5 WD C- Derate above 25°C 0.02 W/°CT , TOperating and Storage Temperature Range -55 to +150 °CJ STGMaximum lead temperature for soldering purposes,T300 °CL1/8" from case for 5 secondsThermal Characteristics Symbol Parameter Typ Max UnitsRThermal Resistance, Junction-to-Ambient * -- 50 °C/WθJA* When mounted on the minimum pad size recommended (PCB Mount)2001 Fairchild Semiconductor Corporation Rev. A, May 2001FQT3P20
|FQT4N20 ,200V N-Channel MOSFETFQT4N20May 2001TMQFETFQT4N20200V N-Channel MOSFET|
FQT4N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.85A, 200V, R = 1.35Ω @V = 10 VDS(on ..
FQT4N20LTF ,200V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect • 0.85A, 200V, R = 1.35Ω @V = 10 VDS(on ..
FQT4N20TF ,200V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 0.85A, 200V, R = 1.4Ω @V = 10 VDS(on) ..
FQT4N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.83A, 250V, R = 1.75Ω @V = 10 VDS(on ..
FQT5P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
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