MMBT2222AWT1 ,General Purpose Transistor
MMBT2222AWT1 ,General Purpose Transistorhttp://onsemi.com3V , COLLECTOR-EMITTER VOLTAGE (VOLTS) h , DC CURRENT GAINCE FEMMBT2222AWT1200 500 ..
MMBT2222LT1 ,General Purpose Transistors(NPN Silicon)ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitSMAL ..
MMBT2222LT1 ,General Purpose Transistors(NPN Silicon)MAXIMUM RATINGSBASERating Symbol Value Unit2Collector−Emitter Voltage V VdcCEO30 EMITTERMMBT2222LT1 ..
MMBT2222LT1 ,General Purpose Transistors(NPN Silicon)
MMBT2222LT1 ,General Purpose Transistors(NPN Silicon)
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mmbt2222aw-MMBT2222AWT1
General Purpose Transistor
MMBT2222AWT1
Preferred DeviceGeneral Purpose T ransistor
NPN SiliconThese transistors are designed for general purpose amplifier
applications. They are housed in the SOT−323/SC−70 package which
is designed for low power surface mount applications.
MAXIMUM RATINGS
THERMAL CHARACTERISTICSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.