ZTX749A ,PNP Low Saturation TransistorZTX749AZTX749APNP Low Saturation Transistor• This device are designed with high current gain and lo ..
ZTX749A ,PNP Low Saturation Transistorapplications involving pulsed or low duty cycle operations.
ZTX749A ,PNP Low Saturation TransistorZTX749AZTX749APNP Low Saturation Transistor• This device are designed with high current gain and lo ..
ZTX750 , PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
ZTX750 , PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
ZTX754 , PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
ZTX749A
PNP Low Saturation Transistor
ZTX749A ZTX749A PNP Low Saturation Transistor • This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. C TO-226 B E Absolute Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage 35 V CEO V Collector-Base Voltage 45 V CBO V Emitter-Base Voltage 5 V EBO I Collector Current - Continuous 2 A C T , T Operating and Storage Junction Temperature Range -55 ~ +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage I = 10mA 35 V CEO C BV Collector-Base Breakdown Voltage I = 100μA45 V CBO C BV Emitter-Base Breakdown Voltage I = 100μA5 V EBO E I Collector Cutoff Current V = 30V 100 nA CBO CB V = 30V, T = 100°C 10 μA CB A I Emitter Cutoff Current V = 4V 100 nA EBO EB On Characteristics* h DC Current Gain I = 50mA, V = 2V 70 FE C CE I = 1A, V = 2V 100 300 C CE I = 2A, V = 2V 75 C CE I = 6A, V = 2V 15 C CE V (sat) Collector-Emitter Saturation Voltage I = 1A, I = 100mA 300 mV CE C B I = 2A, I = 200mA 500 C B V (sat) Base-Emitter Saturation Voltage I = 1A, I = 100mA 1.25 V BE C B V (on) Base-Emitter On Voltage I = 1A, V = 2V 1 V BE C CE Small-Signal Characteristics C Output Capacitance V = 10V, I = 0, f = 1MHz 100 pF obo CB E f Transition Frequency I = 100mA, V = 5V 100 T C CE f = 100MHz * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2% Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 1 W D R Thermal Resistance, Junction to Ambient 125 °C/W θJA ©2002 Rev. A, January 2002
