YTFP250 ,V(dsx): 200V; V(dgr): 200V; V(gss): 20V; 150W; silicon N-channel MOS type field effect effect transistor. For high speed, high current switching applicationsFEATURES:. Low Dra1n-Source 0N Resistance t RDs(on)=0.07OQ(Typ.). ngh Forward Transfer Admittance t ..
Z00607MA 1BA2 ,0.8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitI RMS on-state current (full sine wave) ATI = 50 ..
Z00607MA1BA2 ,SENSITIVE GATE TRIACSapplications where high gate sensitivity isrequired.TO92(Plastic)ABSOLUTE RATINGS (limiting values ..
Z00607MN5AA4 , Standard 0.8 A Triacs
Z0103MA ,1A TRIACSapplications such as home appliances(electrovalve, pump, door lock, small lampcontrol), fan speed c ..
Z0103MA 1AA2 ,1A TRIACSapplications. They can be found in appli-GA2cations such as home appliances (electrovalve,pump, doo ..
YTFP250
V(dsx): 200V; V(dgr): 200V; V(gss): 20V; 150W; silicon N-channel MOS type field effect effect transistor. For high speed, high current switching applications
TOSHIBA (1)1SCRETiivop'r0) HEE D ©
9097250 UUL?H?H H EJTOSH
TOSHIBA FIELD EFFECT TRANSISTOR
SILICON N CHANNEL MOS TYPE (or - MOSI)
"Th 5ct -l 3
INDUSTRIAL APPLICATIONS
HIGH SPEED, HIGH CURRENT swncnmc APPLICATIONS. IJnlt in mm
CHOPPER REGULATOR, DC-OC oonvmmz AND nomn 159m. t8sattte
DRIVE APPLICATIONS.
FEATURES: 'il S
. Low Bra1n-Source ON Resistance t Ros(oN)=0.070Mryp.)
. ngh Forward Transfer Admittance t [stl=123 (Typ.) zeta:
. Low Leakage Current t Icss=tloonA(Max.) i? Vcs=220V
IDss-ZSOUA (Max.) (f VDS'ZOOV
. Enhancement-Node t Vth-2.0N4.0V ty VDS=10V.IDs250uA
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54::02. . asstqz
I. DATE
MAXIMUM RATINGS (Ta=25°C) a DRAIN (BEAT smx)
CHARACTERISTIC SYMBOL RATING UNIT 3 Btmftt3E
Drain-Source Voltage VDSX 200 ll JEch -
Drain-Gate Voltage (RGS=2okn) VDGR 200 ll EIAJ -
TOSHIBA C-26CIB
Cate-S ce ll Ita e ll t 0 V
our o g GSS 2 Height t 4.6g
DC ID 30
Drain Current A
Pulse IDP 120
Drain Power Dissipation
(Tc=25°C) PD 150 ll
Channel Temperature Tch 150 "C
Storage Temperature Range Tseg -55M50 "c
THERMAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Junction to Case Rthtj-c) 0.83 "C/il
Thermal Resistance, Junction to Ambient Rth(j-a) 50 'tlu
Huximum Lead Temperature for Soldering TL 300 "C
Purposes (1.6mm from case for IO seconds)
TOSHIBA (IyTSCRE'l'lil)p'l'0) I45E I) III 9097250 UBL79?5 I: IZITOSH
YTFP250
"T-. 3 c) - :3
ELECTRICAL CHARACTERISTICS ‘(Ta-25°C)
CARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current 1css VGs-tZOV, VDs-OV - - 2100 nh
Drain Cut-off Current IDSS Vnss200V, Vcs-OV - - 250 uh
Drain-Source Breakdown Voltage V(BR)DSS ID-IZSOuA. Vcs-OV 200 - - ll
Gate Threshold Voltage Ilth VDszIOV. ID-ZSOUA 2.0 - 4.0 ll
Forward Transfer Admittance Istl VDS‘IOV. ID-IGA 8 12 - S
Drain-Source ON Resistance RDS(0N) ID-l6A . Vcs=10V - 0.070 0.085 n
Input Capacitance Ciss - 2100 2700
Reverse Transfer Capacitance Crss VDs-IOV. Vcs-OV. f-lMHz - 600 900 pF
Output Capacitance Cogs - 1400 2000
Rise Time tr 1011 VIN I 6 VOUT - 35 70
Turn-on Time ton o Ct - 55 110
Swiching Time Fall Time tf 18715 E - 30 so ns
Turn-off Tine toff 1ejtsii"5iis 1%rk10011 - 90 180
Total Cate char e
(thate-Source Plgs Gate-Drain) q, 1ip30h . Vcs-IOV - 85 120
Gate-Source Charge Qgs VnnirlGOV - 40 - nC
Gate-Drain ("Miller") Charge thy' - " ....
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta-25°C)
CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Continuous Drain Reverse Canem. IDR -- - - 30 A
Rulse Drain Reverse Current IDRP - - - 120 A
Diode Foward Voltage VDSF IDRI30A IVGS'OV - -. 2.0 ll
Reverse Recovery Time trr IDR=30A - 500 - ns
Reverse Recovered Charge hr dIDR/dt-IOOA/us - 4.2 - PC
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