XP611FH ,Silicon PNP epitaxial planer transistorAbsolute Maximum Ratings (Ta=25˚C)nEIAJ : SC–88S–Mini Type Package (6–pin)Parameter Symbol Ratings ..
XP6210 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
XP6211 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
XP6212 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
XP6213 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
XP6215 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
ZC831BTA , SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC832BTA , SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC833B , SOT23 SILICON VARIABLE CAPACITANCE DIODES
ZC836ATA , SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC836B , SOT23 SILICON VARIABLE CAPACITANCE DIODES
ZC836B , SOT23 SILICON VARIABLE CAPACITANCE DIODES
XP611FH
