XP4217 ,Composite DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
XP4311 ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitTr1 Collector-base voltage V 50 VCBO ..
XP4312 ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitTr1 Collector-base voltage V 50 VCBO ..
XP4313 ,Composite DeviceFeatures• Two elements incorporated into one package(Transistors with built-in resistor)1 2 3• Redu ..
XP4314 ,Composite DeviceFeatures• Two elements incorporated into one package(Transistors with built-in resistor)1 2 3• Redu ..
XP4315 ,Composite DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitTr1 Collector-base voltage V 50 VCBO ..
ZC831BTA , SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC832BTA , SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC833B , SOT23 SILICON VARIABLE CAPACITANCE DIODES
ZC836ATA , SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC836B , SOT23 SILICON VARIABLE CAPACITANCE DIODES
ZC836B , SOT23 SILICON VARIABLE CAPACITANCE DIODES
XP4217
