X0402NF 1AA2 ,4A SCRSFEATURES:Symbol Value UnitI4AT(RMS)V /V600 and 800 VDRM RRMI50 to 200 μAGTDESCRIPTIONThanks to high ..
X0402NF 1AA2 ,4A SCRSX04 SeriesSENSITIVE 4A SCRSMAIN
X0403DF ,SENSITIVE GATE SCRapplications where low gate sensitivity is required, T0202-3
like small engine ignition, SMPS crow ..
X0403ME , SENSITINE GATE SCR
X0403MF ,Sensitive gate SCR, 4A, 600Vapplications where low gate sensitivity is required, T0202-3
like small engine ignition, SMPS crow ..
X0405ME , SENSITINE GATE SCR
XC6109C20ANR , Voltage Detector with Delay Type Capacitor
XC6109C22ANR , Voltage Detector with Delay Type Capacitor
XC6109C23ANR , Voltage Detector with Delay Type Capacitor
XC6109C27ANR , Voltage Detector with Delay Type Capacitor
XC6109C30ANR , Voltage Detector with Delay Type Capacitor
XC6109N18ANR , Voltage Detector with Delay Type Capacitor
X04-X0402MF 1AA2-X0402NF 1AA2
4A SCRS
1/5
X04 Series
SENSITIVE 4A SCRS
September 2000- Ed:3
MAIN FEATURES:
DESCRIPTIONThanksto highly sensitive triggering levels, the
X04 SCR seriesis suitable for all applications
where the available gate currentis limited, suchas
capacitive discharge ignitions, motor controlin
kitchen aids, overvoltage crowbar protectionin low
power supplies...
ABSOLUTE RATINGS (limiting values)
X04 Series
ELECTRICAL CHARACTERISTICS(Tj= 25°C, unless otherwise specified)
THERMAL RESISTANCES
PRODUCT SELECTOR
X04 Series
ORDERING INFORMATION
OTHER INFORMATION
Note:xx= sensitivity,y= voltage
Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2-1: Average and D.C. on-state current
versus lead temperature.
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout).
Fig.3: Relative variationof thermal impedance
junctionto ambient versus pulse duration.
X04 Series
Fig.4: Relative variationof gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical
values).
Fig. 8: Surge peak on-state current versus
numberof cycles.
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width<10 ms, and corresponding valueofI²t.
X04 Series
Fig. 10: On-state characteristics (maximum
values).
PACKAGE MECHANICAL DATATO202-3 (Plastic)
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authorizedforuseas critical componentsinlife support devicesor systems without express written approvalof STMicroelectronics. TheST logoisa registered trademarkof STMicroelectronics 2000 STMicroelectronics- Printedin Italy-All Rights Reserved
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