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WS57C51C-45DMB-WS57C51C-45TMB-WS57C51C-55DMB-WS57C51C-55TMB
MILITARY HIGH SPEED 16K x 8 CMOS PROM/RPROM
PRODUCT SELECTION GUIDE
PIN CONFIGURATION
MILITARY HIGH SPEED 16K x 8 CMOS PROM/RPROM
KEY FEATURES Ultra-Fast Access Time • Pin Compatible with Am27S51 45 ns
and N82HS1281
• Low Power Consumption • Immune to Latch-Up Fast Programming — Up to 200 mA
ESD Protection Exceeds 2000 V
GENERAL DESCRIPTIONThe WS57C51C is a High Performance 128K UV Erasable Electrically Re-Programmable Read Only Memory
(RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM
speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the
WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the
entire memory array to be tested for switching characteristics and functionality after assembly. Unlike devices which
cannot be erased, every WS5751C in a windowed package is 100% tested with worst case test patterns both
before and after assembly.
The WS57C51C provides a low power alternative to those designs which are committed to a Bipolar PROM
footprint. It is a direct drop-in replacement for a Bipolar PROM of the same architecture (16K x 8). No software,
hardware or layout changes need be performed.
MODE SELECTION
ORDERING INFORMATION
WS57C51CThe WS57C51C is programmed using Algorithm D shown on page 5-9.
For complete data sheet and electrical specifications see page 2-47.
This datasheet has been :
www.ic-phoenix.com
Datasheets for electronic components.
