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WS57C51C-35D-WS57C51C-35T-WS57C51C-35TI-WS57C51C-45D-WS57C51C-45T-WS57C51C-55D-WS57C51C-55T-WS57C51C-70D-WS57C51C-70T
HIGH SPEED 16K x 8 CMOS PROM/RPROM
PRODUCT SELECTION GUIDE
HIGH SPEED 16K x 8 CMOS PROM/RPROM
KEY FEATURES Very Fast Access Time • Pin Compatible with Am27S51 35 ns
and N82HS1281
• Low Power Consumption • Immune to Latch-Up Fast Programming — Up to 200 mA
ESD Protection Exceeds 2000 V
GENERAL DESCRIPTIONThe WS57C51C is a High Performance 128K UV Erasable Electrically Re-Programmable Read Only Memory
(RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM
speeds while consuming only 25% of the power required by its Bipolar counterparts.
A further advantage of the WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM
technology. This enables the entire memory array to be tested for switching characteristics and functionality after
assembly. Unlike devices which cannot be erased, every WS5751C in a windowed package is 100% tested with
worst case test patterns both before and after assembly.
The WS57C51C provides a low power alternative to those designs which are committed to a Bipolar PROM
footprint. It is a direct drop-in replacement for a Bipolar PROM of the same architecture (16K x 8). No software,
hardware or layout changes need be performed.
PIN CONFIGURATION
BLOCK DIAGRAM
WS57C51C
OPERATING RANGE
ABSOLUTE MAXIMUM RATINGS*Storage Temperature............................–65° to + 150°C
Voltage on any Pin with
Respect to Ground ....................................–0.6V to +7VPP with Respect to Ground...................–0.6V to + 14V
ESD Protection..................................................>2000V
NOTES: 1. CMOS inputs: GND ± 0.3V or VCC± 0.3V. TTL inputs: VIL≤ 0.8V, VIH‡ 2.0V. These are absolute voltages with respect to device ground pin and include all overshoots due to system and/or tester noise.
Do not attempt to test these values without suitable equipment.
*NOTICE:Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at these or any other conditions above
those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of
time may affect device reliability.
MODE SELECTION
DC READ CHARACTERISTICS Over Operating Range. (See Above)
AC READ CHARACTERISTICS Over Operating Range. (See Above)
*Sampled, Not 100% Tested.
WS57C51C
AC READ TIMING DIAGRAM
WS57C51C
CAPACITANCE(4)TA = 25°C, f = 1 MHz
A.C. TESTING INPUT/OUTPUT WAVEFORMTEST LOAD (High Impedance Test Systems)
NOTE:6. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters.
A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCC and ground is recommended.
Inadequate decoupling may result in access time degradation or other transient performance failures.
NOTES:4. This parameter is only sampled and is not 100% tested.
5.Typical values are for TA = 25°C and nominal supply voltages.
WS57C51C
PROGRAMMING INFORMA TION
DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
WS57C51C
NOTE: 7. VPP must not be greater than 13 volts including overshoot.
AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
