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WS57C43C-25D-WS57C43C-25T-WS57C43C-35D-WS57C43C-35J-WS57C43C-35T-WS57C43C-45D-WS57C43C-45T-WS57C43C-55D-WS57C43C-70D
MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM
PIN CONFIGURATION
HIGH SPEED 4K x 8 CMOS PROM/RPROM
KEY FEATURES Ultra-Fast Access Time • Pin Compatible with 4K x 8 Bipolar PROMs— tACC = 25 ns
• Immune to Latch-UP— tCS = 12 ns — Up to 200 mA
• Low Power Consumption • ESD Protection Exceeds 2000 V Fast Programming • Available in 300 Mil DIP and PLDCC
GENERAL DESCRIPTIONThe WS57C43C is a High Performance 32K UV Erasable Electrically Re-Programmable Read Only Memory
(RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM
speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the
WS57C43C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the
entire memory array to be tested for switching characteristics and functionality after assembly. Unlike devices which
cannot be erased, every WS5743C in a windowed package is 100% tested with worst case test patterns both
before and after assembly.
The WS57C43C is configured in the standard Bipolar PROM pinout which provides an easy upgrade path for
systems which are currently using Bipolar PROMs, or its predecessor, the WS57C43B.
PRODUCT SELECTION GUIDE
BLOCK DIAGRAM
DC READ CHARACTERISTICS Over Operating Range. (See Above)
WS57C43C
OPERATING RANGE
ABSOLUTE MAXIMUM RATINGS*Storage Temperature............................–65° to + 150°C
Voltage on any Pin with
Respect to Ground ....................................–0.6V to +7VPP with Respect to Ground...................–0.6V to + 14V
ESD Protection..................................................>2000V
NOTES:1. CMOS inputs: GND ± 0.3V or VCC± 0.3V. TTL inputs: VIL≤ 0.8V, VIH‡ 2.0V. These are absolute voltages with respect to device ground pin and include all overshoots due to system and/or tester noise.
Do not attempt to test these values without suitable equipment.
*NOTICE:Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at these or any other conditions above
those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of
time may affect device reliability.
MODE SELECTION
WS57C43C
AC READ CHARACTERISTICS Over Operating Range. (See Above)
*Sampled, Not 100% Tested.
AC READ TIMING DIAGRAM
WS57C43C
CAPACITANCE(4)TA = 25°C, f = 1 MHz
A.C. TESTING INPUT/OUTPUT WAVEFORMTEST LOAD (High Impedance Test Systems)
NOTE:6. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters.
A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCC and ground is recommended.
Inadequate decoupling may result in access time degradation or other transient performance failures.
NOTES:4. This parameter is only sampled and is not 100% tested.
5.Typical values are for TA = 25°C and nominal supply voltages.
WS57C43C
PROGRAMMING INFORMA TION
DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
WS57C43C
NOTES:8. VPP must not be greater than 13 volts including overshoot.
AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
