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Home ›  WW5 > WS57C191C-35D-WS57C191C-35J-WS57C191C-35P-WS57C191C-45D-WS57C291C-25T-WS57C291C-35T-WS57C291C-45S-WS57C291C-45T-WS57C291C-55T,HIGH SPEED 2K x 8 CMOS PROM/RPROM
WS57C191C-35D-WS57C191C-35J-WS57C191C-35P-WS57C191C-45D-WS57C291C-25T Fast Delivery,Good Price
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Partno Mfg Dc Qty AvailableDescript
WS57C191C-35D |WS57C191C35DWSIN/a10avaiHIGH SPEED 2K x 8 CMOS PROM/RPROM
WS57C191C-35J |WS57C191C35JWSI/STN/a190avaiHIGH SPEED 2K x 8 CMOS PROM/RPROM
WS57C191C-35P |WS57C191C35PWSIN/a39avaiHIGH SPEED 2K x 8 CMOS PROM/RPROM
WS57C191C-45D |WS57C191C45DWSIN/a34avaiHIGH SPEED 2K x 8 CMOS PROM/RPROM
WS57C291C-25T |WS57C291C25TWSIN/a3206avaiHIGH SPEED 2K x 8 CMOS PROM/RPROM
WS57C291C-35T |WS57C291C35TWSIN/a400avaiHIGH SPEED 2K x 8 CMOS PROM/RPROM
WS57C291C-45S |WS57C291C45SWSIN/a390avaiHIGH SPEED 2K x 8 CMOS PROM/RPROM
WS57C291C-45T |WS57C291C45TWSIN/a1980avaiHIGH SPEED 2K x 8 CMOS PROM/RPROM
WS57C291C-55T |WS57C291C55TWSIN/a400avaiHIGH SPEED 2K x 8 CMOS PROM/RPROM


WS57C291C-25T ,HIGH SPEED 2K x 8 CMOS PROM/RPROMGENERAL DESCRIPTIONThe WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically ..
WS57C291C-35T ,HIGH SPEED 2K x 8 CMOS PROM/RPROMWS57C191C/291CHIGH SPEED 2K x 8 CMOS PROM/RPROMKEY
WS57C291C-35TMB ,HIGH SPEED 2K x 8 CMOS PROM/RPROMFEATURES• Ultra-Fast Access Time • Pin Compatible with Am27S191/291and N82S191 Bipolar PROMs— t = ..
WS57C291C-45 ,HIGH SPEED 2K x 8 CMOS PROM/RPROMPIN CONFIGURATIONPINSTOP VIEWCS1/V CS2 CS3 V OUTPUTSPP CCMODECERDIPRead V V V V DIL IH IH CC OUTA 1 ..
WS57C291C-45S ,HIGH SPEED 2K x 8 CMOS PROM/RPROMGENERAL DESCRIPTIONThe WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically ..
WS57C291C-45T ,HIGH SPEED 2K x 8 CMOS PROM/RPROMPIN CONFIGURATIONTOP VIEWEPROM ARRAY6 ROWChip Carrier CERDIP/Plastic DIPDECODERA5 - A10ROW16,384 BI ..
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XC4005XL-09VQ100C ,Field programmable gate array.Functional Descriptionto store the function generator outputs. However, the stor-XC4000 Series devi ..
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XC4005XL-1TQ144C ,Field programmable gate array.0RXC4000E and XC4000X Series FieldProgrammable Gate Arrays00*May 14, 1999 (Version 1.6) Product Spe ..
XC4005XL-1VQ100C ,Field programmable gate array.features,Dual-Port RAMparticularly Select-RAM memory. The XC4000X devicesalso offer many new routin ..


WS57C191C-35D-WS57C191C-35J-WS57C191C-35P-WS57C191C-45D-WS57C291C-25T-WS57C291C-35T-WS57C291C-45S-WS57C291C-45T-WS57C291C-55T
HIGH SPEED 2K x 8 CMOS PROM/RPROM
PRODUCT SELECTION GUIDE
HIGH SPEED 2K x 8 CMOS PROM/RPROM
KEY FEATURES Ultra-Fast Access Time • Pin Compatible with Am27S191/291

— t ACC = 25 ns and N82S191 Bipolar PROMsCS = 12 ns • Immune to Latch-UP Low Power Consumption — Up to 200 mA Fast Programming • ESD Protection Exceeds 2000V Available in 300 Mil DIP and PLDCC
GENERAL DESCRIPTION

The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read
Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar
PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. The WS57C191C/291C
is also configured in the standard Bipolar PROM pinout which provides an easy upgrade path for systems which are
currently using Bipolar PROMs.
The WS57C191C is packaged in a conventional 600 mil DIP package as well as a Plastic Leaded Chip Carrier
(PLDCC) and a Ceramic Leadless Chip Carrier (CLLCC). The WS57C291C is packaged in a space saving 300 mil
DIP package configuration. Both are available in commercial, industrial, and military operating temperature ranges.
PIN CONFIGURATION
BLOCK DIAGRAM
DC READ CHARACTERISTICS Over Operating Range. (See Above)
WS57C191C/291C
OPERATING RANGE
ABSOLUTE MAXIMUM RATINGS*

Storage Temperature............................–65° to + 150°C
Voltage on any Pin with
Respect to Ground ....................................–0.6V to +7VPP with Respect to Ground...................–0.6V to + 14V
ESD Protection..................................................>2000V
NOTES:
1. CMOS inputs: GND ± 0.3V or VCC± 0.3V. TTL inputs: VIL≤ 0.8V, VIH‡ 2.0V. These are absolute voltages with respect to device ground pin and include all overshoots due to system and/or tester noise.
Do not attempt to test these values without suitable equipment.
*NOTICE:

Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at these or any other conditions above
those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of
time may affect device reliability.
MODE SELECTION
WS57C191C/291C
AC READ CHARACTERISTICS
Over Operating Range. (See Above)
*Sampled, Not 100% Tested
AC READ TIMING DIAGRAM
WS57C191C/291C
CAPACITANCE(4)
TA = 25°C, f = 1 MHz
A.C. TESTING INPUT/OUTPUT WAVEFORMTEST LOAD (High Impedance Test Systems)
NOTE:
6. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters.
A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCC and ground is recommended.
Inadequate decoupling may result in access time degradation or other transient performance failures.
NOTES:
4. This parameter is only sampled and is not 100% tested.
5.Typical values are for TA = 25°C and nominal supply voltages.
WS57C191C/291C
PROGRAMMING INFORMA TION
DC CHARACTERISTICS
(TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
WS57C191C/291C
NOTES:
8. VPP must not be greater than 13 volts including overshoot.
AC CHARACTERISTICS
(TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
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