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VQ3001J
Enhancement-Mode MOSFET Transistors Arrays
VISHAY
VQ3001JIP
Vishay Siliconix
Dual N-IDual P-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
V(BR)DSS Min (V) rDS(on) Max (C2) VGS(th) (V) In (A)
N-Channel 30 1 @ VGS = 12 v 0.8 to 2.5 0.35
P-Channel -30 2 @ VGS = -12 v -2 to -4.5 -0.6
FEATURES BENEFITS APPLICATIONS
0 Low On-Resistance: 0.8/1.6 Q . Low Offset Voltage . Direct Logic-Level Interface: TTL/CMOS
0 Low Threshold: 1.5/-3.1 V o Low-Voltage Operation . Drivers: Relays, Solenoids, Lamps, Hammers,
q Low Input Capacitance: 38/60 pF . Easily Driven VWthout Buffer Displays, Memories, Transistors, etc.
q Fast Switching Speed: 9/16 ns . High-Speed Circuits . Battery Operated Systems
. Low Input and Output Leakage 0 Low Error Voltage . Solid-State Relays
N :1 E1103
P :2 $51 LEE
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Top View
Plastic: VQ3001J
Sidebraze: VQ3001 P
Device Marking
Top View
V03001 J
"S" fllxxyy
VQ3001 P
"S" fllxxyy
"S" = Siliconix Logo
f= Factory Code
ll = Lot Traceability
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Single
Parameter Symbol N-Channel P-Channel Total Quad Unit
Drain-Source Voltage V93 30 30
VQ3001J 21:20 i 20 V
- V I V
Gate Source otage VQ3001P GS $20 i20
Continuous Drain Current TA-- 250C ID 0.85 -0.6
(T: = 150°C) TA-- 100°C 0.52 -0.37 A
Pulsed Drain Currenta IDM 3 -2
TA-- 25°C 1.3 1.3 2
P Di si ati P W
ower IS T lon TA-- 100°C D 0.52 0.52 0.8
Thermal Resistance, Junction-to-Ambient RNA 96.2 96.2 62.5 “CM
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 -55 to 150 °C
a. Pulse width limited by maximumjunction temperature.
Document Number: 70221 www.vishay.com
S-04279-Rev. D, 16-Jul-01
Vt23001JlP
VISHAY
Vishay Siliconix
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
N-Channel P-Channel
Parameter Symbol Test Condition Typa Min Max Min Max Unit
Static
Drain-Source VGS = 0 V, lo = 10 “A 55 30
V(BR)DSS
Breakdown Voltage l/ss = 0 V, ID = -10 11A -55 -30
Gate-Source V Vros = VGS, ko = 1 mA 1.5 0.8 2.5
Threshold Voltage GS(th) Vos = V63, lo = -1 mA -3A -2 -4.5
VDS=OV,VGS= iZOV i100 i100
Gate-Body Leakage IGSS nA
VDS=0V,VGS= ce20V,To--125"C i500 i500
Vrs=24V,Vss=0V 10
Zero-Gate IDSS VDs = -24 V, VGS = 0 V -10 “A
Voltage Drain Current VDS = 24 V, VGs = 0 V, TJ = 125°C 500
VDs=-24V, VGS=OV, TJ =125°C -500
VDs=10V,VGs=12V 3 2
On-State Drain Currentb 'D(on) A
VDs=-10V, VGS=-12V -2 -1.5
N/ss=5V,lD--0.2A 1.2 1.75
VGs=12V,ID=1A 0.81 1.0
Drain-Source - -
V =-12V.lrn=-1A 1.
On-State Resistanceb rDS(on) GS ' D 6 2.0 Q
VGs=12\/.ID=1A,TJ=125°C 1.65 2.0
VGs=-12V,lo=-1A,Tu=125''C 2.7 4.0
Vos = 10 V, ID = 0.5 A 500 250
Forward Transconductanctp gts m8
VDs = -10 V, ID = -0.5 A 390 200
Dynamic
I C C 38 110
nput apacitance _
ss 60 150
N-Channel
VDS=15V,VGS=OV,f=1MHz 33 110
Output Capacitance Coss pF
P-Channel 45 100
I/os-_/N/as-_-IMHO: 8 35
Reverse Transfer Capacitance Crss
N-Channel 9 30
Turn-On Tlme t0N VDD = 15 V, RL = 23 Q
ID; 0.6A,VGEN=10V,RG=25Q 19 30
P-Channel 14 30
Turn-Off/e tom: VDD = -15 V, RL = 23 Q
ID --C6A,VGEN=-10V,RG=25Q 16 30
a. For DESIGN AID ONLY, not subject to production testing. VNDQ03A/PEA03
b. Pulse test: PW s300 us duty cycle s2%.
www.vishay.com
DocumentNumber: 70221
S-04279-Rev. D, 16-Jul-01
VQ3001JIP
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED) N-CHANNEL
Output Characteristics for Low Gate Drive
Ohmic Region Characteristics
2.0 200
7 V 10 V
VGS = 10 V
1.6 160 /
A (A 2.7 v
S. g / o,,,,-'"
ic?,' 1.2 E 120 /'"
t g / 2.5 v
E C w,--""''""
5 0.8 tll-l 80 I
I I 2.3 V
AD SI I
o-'''"""
0.4 40 2.1 v
0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2.0
Vos - Drain-to-Source Voltage (V) Vos - Drain-to-Source Voltage (V)
Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage
Vos = 15 v // 3
400 A l l I ID = 0.2 A
A Cl (
V 0.5 A
E 300 f1i. 2
te / 9 I
(r] 200 6 1.0 A
A2 To = 125°C a ¥
100 I "
25°C Z,
'st -551
0 // I 0
0 1 2 3 4 5 0 4 8 12 16 20
l/ss - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V)
Normalized On-Resistance
On-Resistance vs. Drain Current vs. Junction Temperature
2.5 2.25
8 I I 8 2.00 - VGS=10V
g 2.0 fsj.
g V - 4 5 V 3 1 75
GS - . . -
d? 31.3 6 ID - 0.5 A
o 1.5 6 V o “N’
= 1.50
5 z/ / g g f 0.1 A
u? T E 1.25 r
E 1.0 10 v E
0, til 1.00
E; 0.5 E; a""”'7
E 35’ 0.75 //
0 0.50
0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -10 30 70 110 150
ID - Drain Current (A) To - Junction Temperature (°C)
DocumentNumber: 70221 www.vishaycoir
S-04279-Rev. D, 16-Jul-01
Vt23001JlP E
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED) N-CHANNEL
Threshold Region Capacitance
10 120 I l
I/ss = O V
100 f= 1 MHz
li. 1 F,] 80
, ' \\
8 g, 60
l, 0.1 I 40 \
- 0 Ciss
'_--.,.,.... Coss
20 "ss
-5500 'ms....., Crss
0.01 o
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 10 20 30 40 50
VGS - Gate-to-Source Voltage (V) Vos - Drain-to-Source Voltage (V)
Gate Charge Load Condition Effects on Switching
- VDD = 25 v
'D - 1 A Rs = 25 Q
5 Vas = 0 to 10 V
g V'' "G'
i? 4 p" s
> VDS = 15 V s',',,,'''''" m
:1 3 U)
8 /'", E
s) 24 v ,9
2 2 1 5)
“3 -a-f
0 80 160 240 320 400 0.1 1 10
Q9 - Total Gate Charge (pC) b - Drain Current (A)
Drive Resistance Effects on Switching Transconductance
f -''''
VDD=25V To=-tor,,,,,,,a;i---'''''"''''''''"
RL = 24 Q CY
VGS=Oto10V A / 250
b = 1 A "d. 400 s,,pw''''''" w,,,,..,--''''''''''"
A 8 s,,,,,,,--'''"'
Jf.. E / 150°C
tD 15 300
F, 8 /
'i--,'' g 200
- g Vros = 7.5 V
I 100 300 ps, 1% Duty Cycle -
l,, Pulse Test
1O 50 100 0 100 200 300 400 500
Re -Gate Resistance (O) ID - Drain Current(mA)
www.vishay.com Document Number: 70221
11 -4 S-04279-Rev. D, 16-Jul-01
VISHAY
VQ3001JIP
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
P-CHANNEL
Output Characteristics
-2.0 I l -9 V
N/ss = -10 V C,,','.",,,:-)-)'"
-1.6 / / AN -
2,,:,,,,fi,:'c'',';
'i-f: f,,pt'' -7 v
0:) -1.2 tit' '
.E ot?) o,,,,.'''"
E -0.8 I -6 v
o s,,,,,,:'':''',,'.',',,''.
-0.4 o,,,,,,/s4 tCV''''''" AN
'dv''' -4V
O -l -2 -3 -4 -5
I/os - Drain-to-Source Voltage (V)
Capacitance
0 -5 -1 0 -1 5 -20 -25 -30
V05 - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.50 /
Es we,'))
ca) 1.35 Vs =-4.51/
ii. (il ID = .5 A ''"!
ty 1.20
c': é Vas = -10 v
0 l, = .1 A
"tiz,'" 1.05 w,W''
0.90 /
-50 -25 0 25 50 75 100 125 150
T J - Junction Temperature CC)
Was — Gate—to-Source Voltage (V) ID — Drain Current (mA)
IS — Source Current (mA)
Transfer Characteristics
T J = -55''C 0
u'----" 25 C
-2 -4 -6 -8 -10
I/ss - Gate-to-Source Voltage (V)
Gate Charge
Vos = -1 5 V w,,,,,,,,,:::,::'''''''"
ID = -1 A 'j,',',',',',','',',';
we,',',', Vros = AM v
tdr''" ID = -1 A -
0 1000 2000 3000 4000 5000
tag - Total Gate Charge (pC)
Source-Drain Diode Forward Voltage
TJ = 150°C
-1.0 -2.0 -3.0 -4.0
VSD - Source-to-Drain Voltage (V)
DocumentNumber: 70221
S-04279-Rev. D, 16-Jul-01
www.vishay.com
Vt23001JlP E
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED) P-CHANNEL
On-Resistance vs. Gate-to-Source Voltage Threshold Region
3.0 . -10 K
b=-O.5A Vrs=-10V
S, 2.5 -lk TJ=150°C
3 2.0 N "ifz,'
o; Cl -100
L 1 5 -0 2 A "s... E
_r'ii 1ercr:zcee ,
9 .0 -10
O -4 -8 -12 -16 -20 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
N/ss - Gate-to-Source Voltage (V) VGS - Gate-Source Voltage (V)
www.vishay.com Document Number: 70221
11 -6 S-04279-Rev. D, 16-Jul-01
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