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VQ2004J
Enhancement-Mode MOSFET Transistors
VISHAY
VQ2004J
Vishay Siliconix
Quad P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS Min (V) rDS(on) Max (C2) VGS(th) (V) ID (A)
-60 5 @ VGS = -10 v -2 to -A.5 -0.41
FEATURES BENEFITS
o High-Side Switching q Ease in Driving Switches
q Low On-Resistance: 2.59 q Low Offset(Error)Voltage
q Moderate Threshold: -3.4 V q Low-Voltage Operation
. Fast Switching Speed: 40 ns . High-Speed Switching
. Low Input Capacitance: 75 pF . Easily Driven Without Buffer
Dual-ln-Line
I,,.....,)
D‘ '3: HIE D,
NC El NC
G2 5 El G3
P s, EH 12? 83
D2 El 03
Top IAew
Plastic: 1/Q20040
APPLICATIONS
q Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
. Battery Operated Systems
. Power Supply, Converter Circuits
. Motor Control
Device Marking
P Top View
VQ2004J
"S'' fllxxyy
"S" = Siliconix Logo
f= Factory Code
ll = Lot Traceability
P xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Single Total Quad Unit
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS i 30
TA-- 25°C -0.41
Continuous Drain Current (TJ = 150°C) lo
TA-- 100°C -0.23 A
Pulsed Drain Currenta IBM -3
TA-- 25°C 1.3 2
Power Dissipation PD W
TA-- 100°C 0.52 0.8
Thermal Resistance, Junction-to-Ambient RNA 96 62.5 "CAN
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
a. Pulse width limited by maximumjunction temperature.
Document Number: 70220 www.vishay.com
S-04279-Rev. C, 16-Jul-01
Vt220040
Vishay Siliconix
VISHAY
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -10 “A -60 -110
Gate-Threshold Voltage VGS(th) N/os = N/ss, ID = -1 mA -2 -3.4 -A.5
VDs=0V,Vss=ce30V i100
Gate-Bod Leaka e I nA
y g GSS Tu-- 125°C i500
VDs=-60V,VGs=0V -10
Zero Gate Voltage Drain Current bss WA
VDs=-48V,VGs=0V,TJ=125''C -500
On-State Drain Currentb 'D(on) N/rss = -10 V, VGS = -10 V -l -2 A
Vss=-10V, ID---I A 2.5 5
Drain-Source On-Resistanceb r Q
DS(on) T J = 125°C 4.4 8
Forward Transconductancdo gfs VDS = -10 V, ID = Ah5 A 200 325
Common Source Output Conductanceb Jos Vos = -h5 V, ID = -CI A 0.45
Dynamic
Input Capacitance Ciss 75 150
Output Capacitance Coss VDS = -,eh,tszs = 0 V 40 60 pF
Reverse Transfer Capacitance Crss 18 25
Switchinge
td(on) 11 15
Turn-On Tlme
tr VDD = -25 V, RL = 47 Q 30 40
ID E -ih5A,VGEN =-10V ns
tisegt) Rs = 25 Q 20 30
Turn-Ott Time
k 20 30
a. For DESIGN AID ONLY, not subject to production testing. VPDV1O
b. Pulse test: PW s300 us duty cycle s2%.
C. Switching time is essentially independent of operating temperature.
www.vishay.com
DocumentNumber: 70220
S-04279-Rev. C, 16-Jul-01
VISHAY
VQ2004J
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
ID — Drain Current (A)
ID— Drain Current
Ohmic Region Characteristics
VGS=_10V
",,,t1f.
'G'''''"
-1 -2 -3 -4
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Tv,=l-ss, L4
Vros=-101/ /
-2 -4 -6 -8
Ves - Gate-Source Voltage (V)
On-Resistance vs. Drain Current
Vss=-10V
o,,.,,,,,,,,.,)
-0.5 -1.0 -1.5 -2.0 -2.5
ID - Drain Current (A)
ID — Drain Current(
rDs(on) — Drain-Source On-Resistance ( Q )
rDS(on) — On-Resistance ( Q )
(Normalized)
Output Characteristics for Low Gate Drive
VGS = -<0 V
O -0u -0.8 -1.2 -1.6 -2l)
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
\|D=0.1A
0.5 A Is,),
s)s, A
'ht-USL,,,,,,,,,,,,,,
0 -A -8 -1 2 -16 -20
Vss - Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
N/ss-ION/
- ID=0.5A
s,,/''
',,,,p''"
,,,,/''''"
o,,,w'''''''"
w,,,,,,-''''"
ww''''"
-50 -1 0 30 70 110 150
T J - Junction Temperature (°C)
DocumentNumber: 70220
S-04279-Rev. C, 16-Jul-01
www.vishay.com
Vt220040
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Threshold Region Capacitance
-10 200 I
Vss = 0 v
l f=1 MHz
g -1 C"
E sry 120
' g lt Ciss
E 3 80
o o , -----.,,,.._,
I -0.1 l coss
40 Crss "s.,,...
""'"-------........
-0.01 0
-1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 0 -1 O -20 -30 -40 -50
Vss - Gate-to-Source Voltage (V) Vos - Drain-to-Source Voltage (V)
Gate Charge Load Condition Effects on Switching
-15.0 I y'"
ID = -0.5 A o,,,/,',
A -12.5 /
a t()V'"
'i'; -10.0 ' Js':.
> Vos = -50 v t
© -7 5 cn
© ( -80 v E
, / .frzo,
"r' r’ 3
(1,-l -5.0 ,
w vDD = -25 v
f -2.5 RL = 25 Q
Vas = 0 to -10 V (Pulse)
0 100 200 300 400 500
0g - Total Gate Charge (pC) ID - Drain Current(A)
Drive Resistance Effects on Switching Transconductance
T J = -551
(7; 400 --"-"
"if 'i' o,,--''''''''''" 25°C
3 ii' 300 m,,,...--"'"
Q',, g w'''''''' 125°C
- m ----"""'"
.f,j, F, 200 I a,,,,-'" _,,.---'''-
U) TV /'''"
J. VDD = -25 V g V"-'"'"
RL = 50 Q o 100
l/GS = o to -10 v t
ID = -500 mA e
10 100 O -100 -200 -300 -AOO -500
Rs -Gate Resistance (n) ID - Drain Current(mA)
www.vishay.com Document Number: 70220
11 -4 S-04279-Rev. C, 16-Jul-01
:
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