VP0300L ,Enhancement-Mode MOSFET TransistorsVP0300L/LS, VQ2001J/PVishay SiliconixP-Channel 30-V (D-S) MOSFETs Part Number V Min (V) ..
VP0300L ,Enhancement-Mode MOSFET TransistorsS-04279—Rev. E, 16-Jul-0111-1VP0300L/LS, VQ2001J/PVishay Siliconix ..
VP0610L ,Enhancement-Mode MOSFET Transistorsapplications information see AN804.Document Number: 70209
VP0610L ,Enhancement-Mode MOSFET TransistorsS-04623—Rev. G, 03-Sep-0111-1TP0610L/T, VP0610L/T, BS250Vishay Siliconix ..
VP0610T ,Enhancement-Mode MOSFET TransistorsS-04623—Rev. G, 03-Sep-0111-3V – Gate-to-Source Voltage (V) r – On-Resistance ( ) I – Drain Cu ..
VP0808B , P-Channel Enhancement-Mode MOSFET Transistors
WJA1021 , 5V Active-Bias InGaP HBT Gain Block
WJA1500 , 5V Active-Bias InGaP HBT Gain Block
WJA1500 , 5V Active-Bias InGaP HBT Gain Block
WJA1500-PCB , 5V Active-Bias InGaP HBT Gain Block
WJZ1000 , Broadband Surface Mount Mixer
WM5615ID , 10-Bit Digital-to-Analogue Converter
VP0300L
Enhancement-Mode MOSFET Transistors
VISHAY
VP0300L/LS, Vt22001JlP
Vishay Siliconix
P-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (Q) VGS(th) (V) In (A)
VPO300L 2.5 @ VGS = -12 V -2 to -4.5 -0.32
VP03OOLS 2.5 @ VGS = -12 V -2 to -4.5 -th5
VQ2001J -30 2 @ VGS = -12 V -2 to -A.5 -0.6
VQ2001 P 2 @ VGS = -12 V -2 to -4.5 -0.6
FEATURES BENEFITS APPLICATIONS
High-Side Switching
Low On-Resistance: 1.5 C2
Moderate Threshold: -3.1 V
Fast Switching Speed: 17 ns
Low Input Capacitance: 60 pF
q Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven 1/NfIthout Buffer
TO-226AA
(TO-92) TO-92S
(Copper Lead Frame)
Top View Top View
VP0300L VP03OOLS
. Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
. Battery Operated Systems
. Power Supply, Converter Circuits
. Motor Control
For device marking, see the last page of this data sheet.
Dual-ln-Line
D1 U 14 D4
' .EEW #513 S4 P
G1 3 12 G4
NC.11 NC
G2 5 10 Ge
m1 #23: :: P
Top View
Plastic: VQ2001J
Sidebraze: V02001P
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
VQ2001JlP
Parameter Symbol VP0300L VP0300LS Single Total Quad Unit
Drain-Source Voltage I/os -30 -30 -30 -30
Gate-Source Voltage VGS i 20 l 20 ct: 20 i 20
Continuous Drain Current TA-- 25°C I -022 Ah5 -015 AHi
(Ts = 150°C) Te 100°C D -0.2 -0.32 Ah37 -0.37 A
Pulsed Drain Currenta IDM -2.4 -3 -2 -2
TA-- 25°C 0.8 0.9 1.3 2
Power Dissipation PD W
TA-- 100°C 0.32 0.4 0.52 0.8
Thermal Resistance, Junction-to-Ambient RmJA 156 139 96 62.5 °C/W
Operating Junction and 0
Storage Temperature Range To, Tstg -55 to 150 C
a. Pulse width limited by maximumjunction temperature.
For applications information see AN804.
Document Number: 70217 www.vishay.com
S-04279-Rev. E, 16-Jul-01
VP0300LILS, Vt22001JlP
VISHAY
Vishay Siliconix
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
VP0300L/LS VQ2001J/P
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGs = 0 V, b = -10 “A -55 -30 -30
Gate-Threshold Voltage Vsam) Vros = I/ss, ID = -1 mA -3.1 -2 -A.5 Al -4.5
1/rss=0V,VGs=ce16V i100
Gate-Body Leakage less I T J = 125''C i500 nA
VDS=0VVVGS= 120V i100
VDs=-24 V,VGS=0V -10
Zero Gate Voltage Drain Current loss I TJ = 125''C -500 -500 “A
Vros = -30 V, VGS = 0 V -10
On-State Drain Currentb 'D(on) I/rss = -10 V, VGS = -12 V -2.8 -1.5 -1.5 A
Vss---12V, b---IA 1.5 2.5 2
Drain-Source On-Resistanceb rDS(on) Q
TJ = 125°C 2.6 3.6 3.6
Forward Transconductancd' gts Vos = -10 V, b = -0.5 A 370 200 200
Common Source Output Conductanceb gos VDS = -7.5 V, ID = -(),()5 A 0.25
Dynamic
Input Capacitance Ciss 60 150 150
Output Capacitance Coss Vos = -/=1vili/.?zs = 0 V 40 100 100 pF
Reverse Transfer Capacitance Crss 10 60 60
Switchinge
Turn-On Time ION VDD = -25 V, RL = 23 Q 19 30
ID E -IA, VGEN = -10 V
Turn-ofthe tOFF RG = 25 Q 17 30
Turn-On Time tON VDD ---1 5 V, RL = 23 Q 19 30
ID _ -0.6 A, VGEN = -10 V
Turn-ofthe ‘OFF Rs = 25 Q 16 30
a. For DESIGN AID ONLY, not subject to production testing. VPEA03
b. Pulse test: PW S300 115 duty cycle s2%.
c. Switching time is essentially independent of operating temperature.
www.vishay.com
DocumentNumber: 70217
S-04279-Rev. E, 16-Jul-01
VISHAY
VP0300LILS, Vt22001J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Output Characteristics
-2.0 I I -9 V
Vas = "y/fs')'"''','],
-1.6 pr / -8 V -
(Y'''] ’
'iii':: /p1w''''''
- - -7 v
0:3 1.2 'f,',',')'
JG s,pt,,f, o,,,-''''
g -0.8 I -6 v
I ,,,,,,ct:,t:',',',,',,',',',,'.',
-0.4 o,/,ss'''''"''''''''''" -5 V
ty'''''' -4 v
0 -1 -2 -3 -4 -5
Vos - Drain-to-Source Voltage (V)
Capacitance
VGS = 0 V
f= 1 MHz
0 -5 -1 o -1 5 -20 -25 -30
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.50 //
a v -4 5 v we,',')
VA GS = .
'h')': 1.35 ko---0.5A y
ID 8 1.20
a; E I/ss = -10 V
8 ID = -0.1 A
L 1.05
s'4, "
0.90 /
0.75 'gr'''"
-50 -25 0 25 50 75
100 125 150
T J - Junction Temperature CC)
VGS — Gate—to—Source Voltage (V)
Is — Source Current (A)
ID — Drain Current (mA)
Transfer Characteristics
TJ = -55 c 25°C
-2 -4 -6 -8 -10
I/ss - Gate-to-Source Voltage (V)
Gate Charge
Vos = -151/ w,,,,,,,,,:::,',:''''''''"
ID--- A ,,,<
et:,,::'''''''',:':',,", :72: V
o,,,,,,,,::,':'''''''"
1000 2000 3000 4000 5000
Q9 - Total Gate Charge (pC)
Source-Drain Diode Forward Voltage
TJ=150°C
-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
VSD - Source-to-Drain Voltage (V)
DocumentNumber: 70217
S-04279-Rev. E, 16-Jul-01
www.vishaycom
VP0300LILS, Vt22001JlP VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
On-Resistance vs. Gate-to-Source Voltage 10 K Threshold Region
= -10 v
ID = -0.5 A
A A5 -lk T = 150°C
73 A s
t? to -100
8 1.5 ID = -0.2 A "ss... (i,
E" alle::-:::, til
Ji- _o -1 0
O -4 -8 -12 -16 -20 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -A.0
Vas - Gate-to-Source Voltage (V) Ves - Gate-Source Voltage (V)
THERMAL RATINGS
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (T0-226AA, VP0300L Only)
Thermal Impedance
1.D C le,D= -
uty yce t2
2. Per Unit Base = RNA = 156°C/W
Normalized Effective Transient
3. TJM - TA = PDMZmJA“)
0.1 1 10 100 1 K 10 K
11 - Square Wave Pulse Duration (sec)
DEVICE MARKINGS
Front View: Top View:
VP0300L VQ20010
"S" VP V02001J
O300L "SW/rxyy
xxyy "S" = Siliconix Logo
f= Factory Code
II = Lot Traceability
VP0300LS VP0300LS xxyy = Date Code
"S" VP 1/Q2001P
0300LS "SW/rxyy
www.vishay.com Document Number: 70217
11 -4 S-04279-Rev. E, 16-Jul-01
:
www.loq.com
.
