VNV35NV0413TR ,OMNIFET II: FULLY AUTOPROTECTED POWER MOSFETELECTRICAL CHARACTERISTICS (continued) (T =25°C, unless otherwise specified)jDYNAMICSymbol Paramete ..
VNV35NV04TR-E ,OMNIFET II :FULLY AUTOPROTECTED POWER MOSFETFeaturesmonitoring the voltage at the input pin. Type R I VDS(on) lim clampVNB35NV04-E(1)VN ..
VNV35NV04TR-E ,OMNIFET II :FULLY AUTOPROTECTED POWER MOSFETAbsolute maximum ratings . . 6Table 3. Thermal data . . . . . 7Table 4. Off . . ..
VNV49N04 ,"OMNIFET" FULLY AUTOPROTECTED POWER MOSFETELECTRICAL CHARACTERISTICS (-40°C < T < 125°C, unless otherwise specified)jOFFSymbol Parameter Test ..
VO1400AEFTR , 1 Form A Solid State Relay
VO3052 , Optocoupler, Non Zero Crossing Phototriac, 1.5 kV/uS dV/dt, 600 V
WJA1021 , 5V Active-Bias InGaP HBT Gain Block
WJA1500 , 5V Active-Bias InGaP HBT Gain Block
WJA1500 , 5V Active-Bias InGaP HBT Gain Block
WJA1500-PCB , 5V Active-Bias InGaP HBT Gain Block
WJZ1000 , Broadband Surface Mount Mixer
WM5615ID , 10-Bit Digital-to-Analogue Converter
VNV35NV0413TR
OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET
/eiiTa'
VNB35NV04 / VNP35NV04
co VNV35NV04 / VNW35NV04
TYPE Rnsion) him Vclamp
VNB35NV04
VNP35NV04
10 mo (*) 30 A 40 v
VNV35NV04
VNW35NV04
(') For PowerSO-10 only
I LINEAR CURRENT LIMITATION
I THERMAL SHUT DOWN
I SHORT CIRCUIT PROTECTION
I INTEGRATED CLAMP
I LOW CURRENT DRAWN FROM INPUT PIN
I DIAGNOSTIC FEEDBACK THROUGH INPUT
"OMNIFET ll":
FULLY AUTOPROTECTED POWER MOSFET
. J, a .
D2PAK PowerSO-10TM
(tit),,,, 't',
TO-220 TO-247
ORDER CODES:
D2PAK VNB35NV04
TO-220 VNP35NVO4
PowerSO-10m VNV35NV04
TO-247 VNW35NVO4
I ESD PROTECTION
I DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
I COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNB35NV04, VNP35NV04, VNV35NV04,
VNW35NVO4 are monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
BLOCK DIAGRAM
intended for replacement of standard Power
MOSFETS from DC up to 25KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments. Fault feedback can be detected by
monitoring the voltage at the input pin.
Overvoltage
-_ Clamp ‘
INPUT ‘#
Gate l T
E Control “7;
Linear
7 Current
_- Over Limiter
Temperature
SOURCE
FC01000
March 2004
VNB35NV04lVNP35NV04lVNVMNV04lVNW35NV04
ABSOLUTE MAXIMUM RATING
S mbol Parameter Value Unit
y PowerSO-10TM DZPAK TO-220 T0-247
VDS Drain-source Voltage (Nhrr=0V) Internally Clamped V
VIN Input Voltage Internally Clamped V
IN Input Current +/-20 mA
Rm MIN Minimum Input Series Impedance 4.7 9
ID Drain Current Internally Limited A
IR Reverse DC Output Current -30 A
VEsm Electrostatic Discharge (R=1.5KQ, C=100pF) 4000 V
Electrostatic Discharge on output pin only
VESD2 (R=33OQ, C=150pF) 16500 V
Ptot Total Dissipation at Tc=25°C 125 125 125 208 W
T, Operating Junction Temperature Internally limited "C
Tc Case Operating Temperature Internally limited "C
Tstg Storage Temperature -55 to 150 "C
CONNECTION DIAGRAM (TOP VIEW)
INPUT SOURCE
INPUT SOURCE
INPUT C]) NO.
INPUT SOURCE
INPUT SOURCE
(") For the pins configuration related to T0220, TO-247, DZPAK. see outlines at page 1.
CURRENT AND VOLTAGE CONVENTIONS
IIN RIN
--_l-rciNPUT
SOURCE
