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VNS3NV04D
"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET
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VNS3NVO4D
"OMNIFET Il":
FULLY AUTOPROTECTED POWER MOSFET
VNS3NVO4D
Vclamp
40 V (*)
RDS(on) lIim
120 mo (*) 3.5 A (*)
(*)Pereach device
- LINEAR CURRENT LIMITATION
- THERMAL SHUT DOWN
- SHORT CIRCUIT PROTECTION
- INTEGRATED CLAMP
. LOW CURRENT DRAWN FROM INPUT PIN
- DIAGNOSTIC FEEDBACK THROUGH INPUT
- ESD PROTECTION
- DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
- COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNS3NV04D is a device formed by two
monolithic OMNIFET ll chips housed in a
standard SO-8 package. The OMNIFET II are
designed in STMicroelectronics VIPower M0-3
Technology: they are intended for replacement of
standard Power MOSFETS from DC up to 50KHz
BLOCK DIAGRAM
applications. Built in thermal shutdown, linear
current limitation and overvoltage clamp protects
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
OVERVOLTAGE
INPUT1 GATE I _ cCl,
CONTROL ij
Ji'tdt,
i TEMP()E\;{EA:URE LIMITER
DRAIN2
OVERVOLTAGE
GATE INPUT2
CONTROL H U
TEMPERATURE
LINEAR
CURRENT -
LIMITER
SOURCE1
SOURCE2
February 2003
VNS3NV04D
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
VDSn Drain-source Voltage (Van=0V) Internally Clamped V
VINn Input Voltage Internally Clamped V
IINn Input Current +/-20 mA
Rm MINn Minimum Input Series Impedance 220 n
an Drain Current Internally Limited A
IRn Reverse DC Output Current -5.5 A
VESDI Electrostatic Discharge (R=1.5KQ, C=100pF) 4000 V
VESDZ Electrostatic Discharge on output pins only (R=330f2, C=150pF) 16500 V
Ptot Total Dissipation at Tc=25°C 4 W
Tj Operating Junction Temperature Internally limited ''C
Tc Case Operating Temperature Internally limited "C
Tstg Storage Temperature -55 to 150 "C
CONNECTION DIAGRAM (TOP VIEW)
SOURCE1 E 1 U 8 [I DRAIN1
INPUT 1 , [I DRAIN 1
SOURCE 2 E D DRAIN 2
INPUT 2 l] 4 5 D DRAIN 2
CURRENT AND VOLTAGE CONVENTIONS
liNI RIN‘] lm
—:}—[:l INPUT1 DRAIN1 L }—
VIN1 “NZ - RINZ '02 VDs1
—:}—[] INPUT 2 DRAIN 2 [j—
SOURCE 1 SOURCE 2 VDs1
2/14 7,