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VNQ830P
QUAD CHANNEL HIGH SIDE DRIVER
1/21October 2004
VNQ830P-E
QUAD CHANNEL HIGH SIDE DRIVER
Rev. 1
Table 1. General Features
(*) Per each channel
� CMOS COMPATIBLE INPUTS
� OPEN DRAIN STATUS OUTPUTS
� ON STATE OPEN LOAD DETECTION
� OFF STATE OPEN LOAD DETECTION
� SHORTED LOAD PROTECTION
� UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
� PROTECTION AGAINST LOSS OF GROUND
� VERY LOW STAND-BY CURRENT
� REVERSE BATTERY PROTECTION (**)
� IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
DESCRIPTION
The VNQ830P-E is a quad HSD formed by
assembling two VND830-E chips in the same SO-
28 package. The VND830-E is a monolithic device
made by using| STMicroelectronics VIPower M0-3
Technology. The VNQ830P-E is intended for
driving any type of multiple loads with one side
connected to ground.
Active VCC pin voltage clamp protects the device
against low energy spikes (see ISO7637 transient
compatibility table).
Figure 1. Package
Active current limitation combined with thermal
shutdown and automatic restart protects the
device against overload.
The device detects open load condition both in on
and off state. Output shorted to VCC is detected in
the off state. Device automatically turns off in case
of ground pin disconnection.
Table 2. Order Codes
Note: (**) See application schematic at page 11.
TARGET SPECIFICATION
VNQ830P-E
2/21
Figure 2. Block Diagram
3/21
VNQ830P-E
Table 3. Absolute Maximum Ratings
Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins
VNQ830P-E
4/21
Figure 4. Current and Voltage Conventions
Table 4. Thermal Data (Per island)
Note:1. When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35μm thick) connected to all VCC pins. Horizontal
mounting and no artificial air flow.
Note:2. When mounted on a standard single-sided FR-4 board with 6cm2 of Cu (at least 35μm thick) connected to all VCC pins. Horizontal
mounting and no artificial air flow.
5/21
VNQ830P-E
ELECTRICAL CHARACTERISTICS (8VTable 5. Power Outputs (Per each channel)
Note: (**) Per island.
Table 6. Switching (Per each channel) (VCC =13V)
Table 7. VCC - Output Diode
VNQ830P-E
6/21
ELECTRICAL CHARACTERISTICS (continued)
Table 8. Logic Input (Per each channel)
Table 9. Status Pin (Per each channel)
Table 10. Protections (Per each channel) (See note 3)
Note:3. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be
used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration
and number of activation cycles.
Table 11. Openload Detection (Per each channel)
7/21
VNQ830P-E
Figure 5.
Figure 6. Switching time Waveforms
VNQ830P-E
8/21
Table 12. Truth Table
Table 13. Electrical Transient Requirements on VCC Pin
9/21
VNQ830P-E
Figure 7. Waveforms
VNQ830P-E
10/21
Figure 8. Application Schematic
GND PROTECTION NETWORK AGAINST
REVERSE BATTERY
can be used with any type of load.
The following is an indication on how to dimension the
RGND resistor.
1) RGND ≤ 600mV / 2(IS(on)max).
2) RGND ≥ (−VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in RGND (when VCC<0: during reverse
battery situations) is:
PD= (-VCC)2 /RGND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where IS(on)max becomes the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the RGND will
produce a shift (IS(on)max * RGND) in the input thresholds
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same RGND.
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggests to utilize Solution 2.
11/21
VNQ830P-E
Solution 2: A diode (DGND) in the ground line.
A resistor (RGND=1kΩ) should be inserted in parallel to
DGND if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (j600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected.
LOAD DUMP PROTECTION
Dld is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds VCC max DC rating.
The same applies if the device will be subject to
transients on the VCC line that are greater than the ones
shown in the ISO T/R 7637/1 table.
μC I/Os PROTECTION:
If a ground protection network is used and negative
transients are present on the VCC line, the control pins will
be pulled negative. ST suggests to insert a resistor (Rprot)
in line to prevent the μC I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of μC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up
limit of μC I/Os.
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHμC-VIH-VGND) / IIHmax
Calculation example:
For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHμC ≥ 4.5V
5kΩ ≤ Rprot ≤ 65kΩ.
Recommended Rprot value is 10kΩ.
OPEN LOAD DETECTION IN OFF STATE
Off state open load detection requires an external pull-up
resistor (RPU) connected between OUTPUT pin and a
positive supply voltage (VPU) like the +5V line used to
supply the microprocessor.
The external resistor has to be selected according to the
following requirements:
1) no false open load indication when load is connected:
in this case we have to avoid VOUT to be higher than
VOlmin; this results in the following condition
VOUT=(VPU/(RL+RPU))RL2) no misdetection when load is disconnected: in this
case the VOUT has to be higher than VOLmax; this
results in the following condition RPU<(VPU–VOLmax)/
IL(off2).
Because Is(OFF) may significantly increase if Vout is
pulled high (up to several mA), the pull-up resistor RPU
should be connected to a supply that is switched OFF
when the module is in standby.
The values of VOLmin, VOLmax and IL(off2) are available in
the Electrical Characteristics section.
Figure 9. Open Load detection in off state
