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VNQ660SP
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
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VNQ66OSP
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
PRELIMINARY DATA
TYPE RDS(on) lOUT Vcc
VNQ660SP 50mn (*) 6A 36 V
(*) Per each channel
nOUTPUT CURRENT PER CHANNEL: 6A
a CMOS COMPATIBLE INPUTS
n OPEN LOAD DETECTION (OFF STATE)
:1 UNDERVOLTAGE & OVERVOLTAGE
SHUT- DOWN
n OVERVOLTAGE CLAMP
n THERMAL SHUT-DOWN
n CURRENT LIMITATION
a VERY LOW STAND-BY POWER DISSIPATION
n PROTECTION AGAINST:
LOSS OF GROUND & LOSS OF Vcc
n REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ660SP is a monolithic device made by
using STMicroelectronics VIPower M0-3
Technology, intended for driving resistive or
inductive loads with one side connected to ground.
ABSOLUTE MAXIMUM RATING
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PowerSO-10TM
This device has four independent channels. Built-
in thermal shut down and output current limitation
protect the chip from over temperature and short
circuit.
Symbol Parameter Value Unit
Vcc Supply voltage (continuous) 41 V
A/cc Reverse supply voltage (continuous) -0.3 V
IOUT Output current (continuous), per each channel Internally limited A
IR Reverse output current (continuous), per each channel -15 A
IN Input current +/- 10 mA
ISTAT Status current +/- 10 mA
IGND Ground current at TC§25°C (continuous) -200 mA
VESD Electrostatic discharge (R=1.5k§2; C=100pF) 2000 V
Ptot Power dissipation at TC=25°C 89 W
T] Junction operating temperature -40 to 150 °C
Tstg Storage temperature -65 to 150 ''C
EC Non repetitive clamping energy at Tc=25 deg. 150 m]
(**) See application schematic at page 8
December 2000
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