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VNQ600ASTMN/a2avaiQUAD CHANNEL HIGH SIDE SOLID STATE RELAY


VNQ600A ,QUAD CHANNEL HIGH SIDE SOLID STATE RELAYVNQ600A®PQUAD CHANNEL HIGH SIDE SOLID STATE RELAYTYPE R (*) I VDS(on) lim CCVNQ600A 35mΩ 25A 36 V(* ..
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VNQ600A
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
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VNQGOOA
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
TYPE RDS(on)(*) llim Vcc
VNQ6OOA 35mQ 25A 36 V
(*) Per each channel
a DC SHORT CIRCUIT CURRENT: 25A
II CMOS COMPATIBLE INPUTS
n PROPORTIONAL LOAD CURRENT SENSE
n UNDERVOLTAGE & OVERVOLTAGE
SHUT-DOWN
n OVERVOLTAGE CLAMP
l THERMAL SHUT-DOWN
n CURRENT LIMITATION
a VERY LOW STAND-BY POWER DISSIPATION
n PROTECTION AGAINST:
LOSS OF GROUND & LOSS OF Vcc
n REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ600A is a quad HSD formed by
assembling two VND600 chips in the same SO-28
ABSOLUTE MAXIMUM RATING
SO-28 (DOUBLE ISLAND)
ORDER C OD ES
PACKAGE TUBE T&R
SO-28 VNQ600A VNQ600A13TR
package. The VND600 is a monolithic device
designed in STMicroelectronics VIPower M0-3
Technology. The VNQ600A is intended for driving
any type of multiple loads with one side connected
to ground. This device has four independent
channels and four analog sense outputs which
deliver currents proportional to the outputs
currents. Active current limitation combined with
thermal shut-down and automatic restart protect
the device against overload. Device automatically
turns off in case of ground pin disconnection.
Symbol Parameter Value Unit
Vcc Supply voltage (continuous) 41 V
-VCC Reverse supply voltage (continuous) -0.3 V
IOUT Output current (continuous), for each channel 15 A
IR Reverse output current (continuous), for each channel -15 A
IN Input current +/- 10 mA
' -3 V
VCSENSE Current sense maximum voltage +15 V
IGND Ground current at Tpins s 25°C (continuous) -200 mA
Electrostatic Discharge (Human Body Model: R=1.5KQ; C=100pF)
- INPUT 4000 V
VESD - CURRENT SENSE 2000 V
- OUTPUT 5000 V
- Vcc 5000 V
Maximum Switching Energy
EMAX 126 mJ
(L=0.11mH; RL=OQ; Vbat=13-5VJ Tjstan=150°C; IL=4OA)
Ptot Power dissipation (per island) at Tlead=25°C 6.25 W
T; Junction operating temperature Internally Limited °C
Tstg Storage temperature -55 to 150 ''C
(") See application schematic at page 9.
October 2002
VNQGOOA
BLOCK DIAGRAM
Vcc 1,2
- OVERVOLTAGE
UNDERVOLTAG -- .
OUTPUT1
INPUT1 co-iF-
CURRENT
INPUT 2 cry-tcr- SENSE1
GND 1,2 C) OUTPUT2
OVERTEMP. 1
loure CURRENT
OVERTEMP 2 3 SENSE 2
OVERVOLTAGE %] Vcc 3,4
UNDERVOLTAGE
OUTPUT 3
INPUT 3 'ro-IF-
LOGIC [OUTS
. _(iccccr) %3 CURRENT
INPUT 4 n-IF- SENSE 3
DEMAG 4 V
GND 3,4 Cl l 1 OUTPUT4
OVERTEMP. 3 'UM4
'0UT4 CURRENT
OVERTEMP 4 . SENSE 4
2/18 cr,
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