VNH3ASP30TR-E ,automotive fully integrated h-bridge motor driverAbsolute Maximum RatingSymbol Parameter Value UnitV Supply Voltage + 41 VCCI Maximum Output Current ..
VNH3ASP30TR-E ,automotive fully integrated h-bridge motor driverFeatures Figure 1. PackageTYPE R I VDS(on) OUT ccmax42 mΩ maxVNH3ASP30-E 30 A 41 V(per leg)■ OUTPUT ..
VNH3SP30 ,FULLY INTEGRATED H-BRIDGE MOTOR DRIVERABSOLUTE MAXIMUM RATINGSymbol Parameter Value UnitV Supply voltage -0.3.. 40 VCCI Maximum output cu ..
VNH3SP30 ,FULLY INTEGRATED H-BRIDGE MOTOR DRIVERBLOCK DIAGRAMVCCOVERTEMPERATURE A O + UV V OVERTEMPERATURE BCLAMP A CLAMP BHS DRIVER DRIVER HSA BLO ..
VNH3SP30-E ,AUTOMOTIVE FULLY INTEGRATED H-BRIDGE MOTOR DRIVERBlock diagram . . . . 5Figure 2. Configuration diagram (top view) . . . . . 6Figure 3. ..
VNH3SP30TR-E , Automotive fully integrated H-bridge motor driver
WFF10N65 , Silicon N-Channel MOSFET
WFF12N65 , Silicon N-Channel MOSFET
WFF2N60 , Silicon N-Channel MOSFET
WFF2N60 , Silicon N-Channel MOSFET
WFF2N60 , Silicon N-Channel MOSFET
WFF630 , Silicon N-Channel MOSFET
VNH3ASP30-E-VNH3ASP30TR-E
automotive fully integrated h-bridge motor driver
1/18September 2004
VNH3ASP30-EAUTOMOTIVE FULLY INTEGRATED
H-BRIDGE MOTOR DRIVER
Rev. 1
Table 1. General Features� OUTPUT CURRENT: 30A
� 5V LOGIC LEVEL COMPATIBLE INPUTS
� UNDERVOLTAGE AND OVERVOLTAGE
SHUT-DOWN
� OVERVOLTAGE CLAMP
� THERMAL SHUT DOWN
� CROSS-CONDUCTION PROTECTION
� LINEAR CURRENT LIMITER
� VERY LOW STAND-BY POWER
CONSUMPTION
� PWM OPERATION UP TO 20 KHz
� PROTECTION AGAINST:
LOSS OF GROUND AND LOSS OF VCC
� CURRENT SENSE OUTPUT PROPORTIONAL
TO MOTOR CURRENT
� IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
DESCRIPTIONThe VNH3ASP30-E is a full bridge motor driver
intended for a wide range of automotive
applications. The device incorporates a dual
monolithic High-Side drivers and two Low-Side
switches. The High-Side driver switch is designed
using STMicroelectronic’s well known and proven
proprietary VIPower™ M0 technology that allows
to efficiently integrate on the same die a true
Power MOSFET with an intelligent signal/
protection circuitry.
Figure 1. PackageThe Low-Side switches are vertical MOSFETs
manufactured using STMicroelectronic’s
proprietary EHD (‘STripFET™’) process. The
three dice are assembled in MultiPowerSO-30
package on electrically isolated leadframes. This
package, specifically designed for the harsh
automotive environment offers improved thermal
performance thanks to exposed die pads.
Moreover, its fully symmetrical mechanical design
allows superior manufacturability at board level.
The input signals INA and INB can directly
interface to the microcontroller to select the motor
direction and the brake condition. The DIAGA/ENA
or DIAGB/ENB, when connected to an external
pull-up resistor, enable one leg of the bridge. They
also provide a feedback digital diagnostic signal.
The normal condition operation is explained in the
truth table on page 7. The CS pin allows to monitor
the motor current by delivering a current
proportional to its value. The PWM, up to 20KHz,
lets us to control the speed of the motor in all
possible conditions. In all cases, a low level state
on the PWM pin will turn off both the LSA and LSB
switches. When PWM rises to a high level, LSA or
LSB turn on again depending on the input pin
state.
Table 2. Order Codes
TARGET SPECIFICATION
VNH3ASP30-E
Figure 2. Block Diagram
Figure 3. Configuration Diagram (Top View)
3/18
VNH3ASP30-E
Table 3. Pin Definitions And FunctionsNote: (*) GNDA and GNDB must be externally connected together.
Table 4. Pin Functions Description
Table 5. Block Descriptions (see Block Diagram)
VNH3ASP30-E
Table 6. Absolute Maximum Rating
Figure 4. Current and Voltage Conventions
Table 7. Thermal DataNote: (*) When mounted using the recommended pad size on FR-4 board (see MultiPowerSO-30 Mechanical data).
5/18
VNH3ASP30-E
ELECTRICAL CHARACTERISTICS (VCC=9V up to 16V; -40°C
Table 8. Power
Table 9. Logic Inputs (INA, INB, ENA, ENB)
VNH3ASP30-E
ELECTRICAL CHARACTERISTICS (continued)
Table 10. PWM
Table 11. Switching (VCC=13V, RLOAD=1Ω)
Table 12. Protection And Diagnostic
7/18
VNH3ASP30-E
ELECTRICAL CHARACTERISTICS (continued)
Table 13. Current Sense (9V
Note:(*) Analog sense current drift is deviation of factor K for a given device over (-40°C to 150°C and 9Vvalue measured at Tj=25°C, VCC=13V.
WAVEFORMS AND TRUTH TABLE
Table 14. Truth Table In Normal Operating Conditions
In normal operating conditions the DIAGX/ENX pin is
considered as an input pin by the device. This pin must be
externally pulled high.
PWM pin usage:
In all cases, a “0” on the PWM pin will turn-off both LSA
and LSB switches. When PWM rises back to “1”, LSA or
LSB turn on again depending on the input pin state.
VNH3ASP30-E
Figure 5. Typical Application Circuit For Dc To 20KHz PWM Operation
In case of a fault condition the DIAGX/ENX pin is consid-
ered as an output pin by the device.
The fault conditions are:
- overtemperature on one or both high sides (for example
if a short to ground occurs as it could be the case
described in line 1 and 2 in the table below);
- short to battery condition on the output (saturation
detection on the Low-Side Power MOSFET).
Possible origins of fault conditions may be:
OUTA is shorted to ground ---> overtemperature
detection on high side A.
OUTA is shorted to VCC ---> Low-Side Power MOSFET
saturation detection.
When a fault condition is detected, the user can know
which power element is in fault by monitoring the INA,
INB, DIAGA/ENA and DIAGB/ENB pins. In any case,
when a fault is detected, the faulty leg of the bridge is
latched off. To turn-on the respective output (OUTX)
again, the input signal must rise from low to high level.
Table 15. Truth Table In Fault Conditions (detected on OUTA)
Fault Information Protection Action
9/18
VNH3ASP30-E
Table 16. Electrical Transient Requirements
Reverse Battery Protection
Three possible solutions can be thought of:
a) a Schottky diode D connected to VCC pin
b) a N-channel MOSFET connected to the GND
pin (see Typical Application Circuit on fig. 5)
c) a P-channel MOSFET connected to the VCC
pin.
The device sustains no more than -30A in reverse
battery conditions because of the two Body diodes
of the Power MOSFETs. Additionally, in reverse
battery condition the I/Os of VNH3ASP30 will be
pulled down to the VCC line (approximately -1.5V).
Series resistor must be inserted to limit the current
sunk from the microcontroller I/Os. If IRmax is the
maximum target reverse current through μC I/Os,
series resistor is: IOs V CC– Rmax
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