VND3NV04 ,"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFETELECTRICAL CHARACTERISTICS (continued) (T =25°C, unless otherwise specified)jDYNAMICSymbol Paramete ..
VND3NV0413TR ,OMNIFET II: FULLY AUTOPROTECTED POWER MOSFETELECTRICAL CHARACTERISTICS (continued) (T =25°C, unless otherwise specified)jDYNAMICSymbol Paramete ..
VND3NV0413TR ,OMNIFET II: FULLY AUTOPROTECTED POWER MOSFETBLOCK DIAGRAMDRAIN2 OvervoltageClampINPUTGate1Control LinearCurrent OverLimiterTemperature 3SOURCEF ..
VND5004ASP30-E ,Double 4mOhm high side driver with analog current sense for automotive applicationsBlock diagram . . . . 5Figure 2. Configuration diagram (not in scale) . . 6Figure 3. C ..
VND5004ASP30TR-E ,Double 4mOhm high side driver with analog current sense for automotive applicationsapplicationsMax transient supply voltage V 41VCCDescriptionOperating voltage range V 4.5 to 27VCCMa ..
VND5004ATR-E ,Double 4mOhm high side driver with analog current sense for automotive applicationsAbsolute maximum ratings . . 7Table 5. Thermal data . . . . . 8Table 6. Power section ..
WE2408 , 2.4GHz Single Chip FM Transceiver
WE9140A , TONE/PULSE SWITCHABLE DIALER WITH REDIAL
WE9140A , TONE/PULSE SWITCHABLE DIALER WITH REDIAL
WE9140G , TONE/PULSE SWITCHABLE DIALER WITH REDIAL
WE9140J , TONE/PULSE SWITCHABLE DIALER WITH REDIAL
WE9142 , 10-MEMORY TONE/PULSE SWITCHABLE DIALER
VND3NV04-VNN3NV04
"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET
/erT/,'
VNN3NV04 / VNS3NV04
co VND3NVO4 / VND3NV04-1
TYPE RDS(on) lIim Vclamp
VNN3NVO4
VNS3NV04 120 mn 3.5 A 40 V
VND3NVO4
VND3NV04-1
I LINEAR CURRENT LIMITATION
I THERMAL SHUT DOWN
I SHORT CIRCUIT PROTECTION
I INTEGRATED CLAMP
I LOW CURRENT DRAWN FROM INPUT PIN
I DIAGNOSTIC FEEDBACK THROUGH INPUT
"OMNIFET Il":
FULLY AUTOPROTECTED POWER MOSFET
Ctg 2 3
SOT-223
sdii,ii,,
T0252 (DPAK) T0251 (IPAK)
ORDER CODES:
SOT-223 VNN3NV04
SO-8 VNS3NV04
TO-252 (DPAK) VND3NV04
TO-251 (IPAK) VND3NV04-1
I ESD PROTECTION
I DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
I COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNN3NV04, VNS3NV04, VND3NV04
VND3NV04-1, are monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
BLOCK DIAGRAM
intended for replacement of standard Power
MOSFETS from DC up to 5OKHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Overvoltage
-a"U Clamp -
INPUT Gate
Li Control
7 Over
Temperature
Linear
Current
Limiter
SOURCE FC01000
February 2003
VNN3NVO4 I VNS3NV04 I VND3NV04 I VND3NV04-1
ABSOLUTE MAXIMUM RATING
Symbol Parameter S OT- 2 2 3 S 0- 8 DPAKIIPAK Unit
VDS Drain-source Voltage (1hN=0V) Internally Clamped V
VIN Input Voltage Internally Clamped V
IN Input Current +/-20 mA
RIN MIN Minimum Input Series Impedance 220 f2
ID Drain Current Internally Limited A
IR Reverse DC Output Current -5.5 A
VESDI Electrostatic Discharge (R=1.5KQ, C=100pF) 4000 V
Electrostatic Discharge on output pin only
VESD2 (R=33OQ, C=150pF) 16500 V
Ptot Total Dissipation at Tc=25°C 7 8.3 y 35 w
T, Operating Junction Temperature Internally limited 'C
Tc Case Operating Temperature Internally limited 'C
Tstg Storage Temperature -55 to 150 "C
CONNECTION DIAGRAM (TOP VIEW)
SO-8 Package (*)
SOURCE , 1 U 8 , DRAIN
SOURCE [ J DRAIN
SOURCE , J DRAIN
INPUT , 4 5 J DRAIN
C) For the pins configuration related to SOT-223, DPAK, IPAK see outlines at page l,
CURRENT AND VOLTAGE CONVENTIONS
IIN RIN
—:—E] INPUT
SOURCE
2/21 gr,
