VND14NV0413TR ,OMNIFET II: FULLY AUTOPROTECTED POWER MOSFETFEATURES - OVERTEMPERATURE AND SHORT CIRCUITPROTECTION:During normal operation, the INPUT pin isele ..
VND14NV04-1-E ,OMNIFET II :FULLY AUTOPROTECTED POWER MOSFETfeatures . . 94 Package thermal data . . . . . . . 184.1 DPAK thermal data . . 184.2 ..
VND14NV04-E ,OMNIFET II :FULLY AUTOPROTECTED POWER MOSFETFeatures 33TYPE R I V DS(on) lim clamp 211TO-252 (DPAK) TO-251 (IPAK)VNB14NV04 VND ..
VND1NV04 ,"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFETELECTRICAL CHARACTERISTICS (continued) (T =25°C, unless otherwise specified)jDYNAMICSymbol Paramete ..
VND3NV04 ,"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFETELECTRICAL CHARACTERISTICS (continued) (T =25°C, unless otherwise specified)jDYNAMICSymbol Paramete ..
VND3NV0413TR ,OMNIFET II: FULLY AUTOPROTECTED POWER MOSFETELECTRICAL CHARACTERISTICS (continued) (T =25°C, unless otherwise specified)jDYNAMICSymbol Paramete ..
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VND14NV0413TR
OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET
gerTpi'
VNB14NV04IVND14NVO4
VND14NV04-1IVNP14NV04IVNS14NV04
"OMNIFET Il":
FULLY AUTOPROTECTED POWER MOSFET
TYPE RDS(on) Ilim Vclamp
VNB14NVO4
VND14NV04
VND14NV04-1 35 mi) 12 A 40 V
VNP14NVO4
VNS14NVO4
n LINEAR CURRENT LIMITATION
n THERMAL SHUT DOWN
n SHORT CIRCUIT PROTECTION
n INTEGRATED CLAMP
n LOW CURRENT DRAWN FROM INPUT PIN
n DIAGNOSTIC FEEDBACK THROUGH INPUT
n ESD PROTECTION
n DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
n COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNB14NV04, VND14NV04, VND14NV04-1,
VNP14NV04, VNS14NVO4, are monolithic
devices designed in STMicroelectronics VIPower
M0-3 Technology, intended for replacement of
standard Power MOSFETS from DC up to 50KHz
BLOCK DIAGRAM
TO-252 (DPAK)
tiii),,'),
To-220‘
TO-251 (IPAK)
ORDER CODES
VNB14NV04 VNB14NV0413TR
VND14NV04 VND14NV0413TR
VND14NV04-1 - -
VNP14NVO4 -
VNS14NV04 -
PACKAGE
TO-252 (DPAK)
TO-251 (IPAK)
TO-220
applications. Built in thermal shutdown, linear
current limitation and overvoltage clamp protect
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Overvoltage
Control
Linear
Temperature
Current
Limiter
SOURCE
March 2004
VNB14NV04 l VND14NV04 I VND14NVO4-1 I VNP14NV04 l VNS14NV04
ABSOLUTE MAXIMUM RATING
Value .
Symbol Parameter SO-8 DPAK TO-220 IPAK D2PAK Unit
VDS Drain-source Voltage (V.N=0V) Internally Clamped V
VIN Input Voltage Internally Clamped V
IN Input Current +/-20 mA
RIN MIN Minimum Input Series Impedance 10 9
ID Drain Current Internally Limited A
IR Reverse DC Output Current -15 A
VESD1 Electrostatic Discharge (R=1.5kf2, C=100pF) 4000 V
Electrostatic Discharge on output pin only
VESD2 (R=33OQ, C=150pF) 16500 V
Ptot Total Dissipation at Tc=25°C 4.6 74 74 74 74 W
Maximum Switching Energy (L=0.4mH;
EMAX R509; Vbat=13.5V; Tjstan=150°C; lL=18A) 93 93 mJ
I) Operating Junction Temperature Internally limited "C
Tc Case Operating Temperature Internally limited °C
Tstg Storage Temperature -55 to 150 "C
CONNECTION DIAGRAM (TOP VIEW)
SO-8 Package (*)
SOURCE D 1 1_,) 8 l DRAIN
SOURCE U D DRAIN
SOURCE l [I DRAIN
INPUT [1 4 5 l DRAIN
(') For the pins configuration related to DPAK, D2PAK, IPAK, TO-220 see outlines at page l.
CURRENT AND VOLTAGE CONVENTIONS
IIN RIN
—:p—:—’1 INPUT
SOURCE
2/29 gr,
