VND10N06-1 ,"OMNIFET" FULLY AUTOPROTECTED POWER MOSFETABSOLUTE MAXIMUM RATINGSymbol Parameter Value UnitDPAK ISOWATT220 SOT82-FMIPAKV Drain-source Voltag ..
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VND10N06-1-E ,OMNIFET :FULLY AUTOPROTECTED POWER MOSFETAbsolute maximum ratings . . 6Table 3. Thermal data . . . . . 6Table 4. Off . . ..
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VND10N06-VND10N06.-VND10N06-1-VNP10N06FI
"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET
VND10N06/VND10N06-1
VNP10N06FI/K10N06FM"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
October 1997
BLOCK DIAGRAM (*) LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN LOGIC LEVEL INPUT THRESHOLD ESD PROTECTION SCHMITT TRIGGER ON INPUT HIGH NOISE IMMUNITY
DESCRIPTION The VND10N06, VND10N06-1, VNP10N06FI and
VNK10N06FM are monolithic devices made
using SGS-THOMSON Vertical Intelligent Power
M0 Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
(∗) SOT82-FM Pin Configuration: INPUT = 3; SOURCE = 1; DRAIN = 2.
1/14
ABSOLUTE MAXIMUM RATING
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM2/14
ELECTRICAL CHARACTERISTICS (continued)DYNAMIC
SWITCHING (**)
SOURCE DRAIN DIODE
PROTECTION
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM3/14
PROTECTION FEATURESDuring Normal Operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path
as soon as VIN > VIH.
The device then behaves like a standard power
MOSFET and can be used as a switch from DC
to 50KHz. The only difference from the user’s
standpoint is that a small DC current (typically
150 μA) flows into the INPUT pin in order to
supply the internal circuitry.
During turn-off of an unclamped inductive load
the output voltage is clamped to a safe level by
an integrated Zener clamp between DRAIN pin
and the gate of the internal Power MOSFET.
In this condition, the Power MOSFET gate is set
to a voltage high enough to sustain the inductive
load current even if the INPUT pin is driven to 0V.
The device integrates an active current limiter
circuit which limits the drain current ID to Ilim
whatever the INPUT pin Voltage.
When the current limiter is active, the device
operates in the linear region, so power dissipation
may exceed the heatsinking capability. Both case
and junction temperatures increase, and if this
phase lasts long enough, junction temperature
may reach the overtemperature threshold Tjsh.
If Tj reaches Tjsh, the device shuts down
whatever the INPUT pin voltage. The device will
restart automatically when Tj has cooled down to
Tjrs
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM4/14
Thermal Impedance For DPAK / IPAK
Thermal Impedance For SOT82-FM
Output Characteristics
Thermal Impedance For ISOWATT220
Derating Curve
Static Drain-Source On Resistance vs Input
Voltage
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM5/14
Static Drain-Source On Resistance
Input Charge vs Input Voltage
Normalized Input Threshold Voltage vs
Temperature
Static Drain-Source On Resistance
Capacitance Variations
Normalized On Resistance vs Temperature
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM6/14
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-Source Voltage Slope
Turn-on Current Slope
Turn-off Drain-Source Voltage Slope
Switching Time Resistive Load
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM7/14
