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VND10BSP-VND10BSP13TR
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY
VND10BSPISO HIGH SIDE SMART POWER SOLID STATE RELAY
March 1998
BLOCK DIAGRAM OUTPUT CURRENT (CONTINUOUS):
14A @ Tc = 85o C PER CHANNEL 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT INDUCTIVE LOAD FAST
DEMAGNETIZATION VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION The VND10BSP is a monolithic device made
using SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded. This
device has two channels, and a common
diagnostic. Built-in thermal shut-down protects
the chip from over temperature and short circuit.
The status output provides an indication of open
load in on state, open load in off state,
overtemperature conditions and stuck-on to VCC.
1/9
ABSOLUTE MAXIMUM RATING
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
VND10BSP2/9
THERMAL DATA($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS (8 < VCC < 16 V; -40 ≤ Tj ≤ 125 o C unless otherwise specified)
POWER
SWITCHING
LOGIC INPUT
VND10BSP3/9
ELECTRICAL CHARACTERISTICS (continued)PROTECTION AND DIAGNOSTICS
(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
NOTE = (^) See switching time waveform
NOTE = (•) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor
calculated to not exceed 10 mA at the input pin.
NOTE = note 1: The Nominal Current is the current at Tc = 85 o C for battery voltage of 13V which produces a voltage drop of 0.5 V
NOTE = note 2: IOL(off) = (VCC -VOL)/ROL
note 3:tpovl tpol: ISO definition.
Note 2 Relevant Figure Note 3 Relevant Figure
VND10BSP4/9
FUNCTIONAL DESCRIPTIONThe device has a diagnostic output which
indicates open load in on-state, open load in
off-state, over temperature conditions and
stuck-on to VCC.
From the falling edge of the input signal, the
status output, initially low to signal a fault
condition (overtemperature or open load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (tpol) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140 o C. When this temperature returns to 125 oC
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor being located inside the Power
MOS area. An internal function of the devices
ensures the fast demagnetization of inductive
loads with a typical voltage (Vdemag) of -18V. This
function allows to greatly reduces the power
dissipation according to the formula:
Pdem = 0.5 • Lload •(Ιload)2 • [(VCC+Vdemag)/Vdemag]
• f
where f = switching frequency and
Vdemag = demagnetization voltage.
The maximum inductance which causes the chip
temperature to reach the shut-down temperature
in a specified thermal environment is a function of
the load current for a fixed VCC, Vdemag and f
according to the above formula. In this device if
the GND pin is disconnected, with VCC not
exceeding 16V, it will switch off.
PROTECTING THE DEVICE AGAINST
REVERSE BATTERY The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig.3).
The consequences of the voltage drop across
this diode are as follows:
If the input is pulled to power GND, a negative
voltage of -Vf is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND).
The undervoltage shutdown level is increa- sed
by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 3), which becomes
the common signal GND for the whole control
board avoiding shift of Vih, Vil and Vstat. This
solution allows the use of a standard diode.
Switching Time Waveforms
VND10BSP5/9
TRUTH TABLE(**) with additional external resistor.
Figure 1: Waveforms
VND10BSP6/9
