VNB35N07-VNP35N07FI Fast Delivery |IC PHOENIX CO.,LIMITED

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VNB35N07-VNP35N07FI
"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET
VNP35N07FI
VNB35N07/VNV35N07
”OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
June 1998
BLOCK DIAGRAM(∗)
TYPE Vclamp RDS(on) Ilim
VNP35N07FI
VNB35N07
VNV35N07VVV
0.028Ω
0.028 Ω
0.028ΩAAA LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNP35N07FI, VNB35N07 and VNV35N07
are monolithic devices made using
STMicroelectronics VIPower M0 Technology,
intended for replacement of standard power
MOSFETSin DCto 50 KHz applications. Built-in
thermal shut-down, linear current limitation and
overvoltage clamp protect the chip in harsh
enviroments.
Fault feedback can be detectedby monitoring the
voltageat the input pin.
PowerSO-1023
D2PAK
TO-263
ISOWATT220
(∗) PowerSO-10Pin Configuration: INPUT= 6,7,8,9,10;SOURCE= 1,2,4,5; DRAIN= TAB
1/13
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
PowerSO-10
D2PAK
ISOWATT220
VDS Drain-source Voltage (Vin=0) Internally Clamped V
Vin Input Voltage 18 V Drain Current Internally Limited A Reverse DC Output Current -50 A
Vesd Electrostatic Discharge (C= 100 pF, R=1.5 KΩ) 2000 V
Ptot Total DissipationatTc =25oC 125 40 W Operating Junction Temperature Internally Limited oC Case Operating Temperature Internally Limited oC
Tstg Storage Temperature -55to 150 oC
THERMAL DATA
ISOWATT220 PowerSO-10 D2PAK
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
62.5 C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VCLAMP Drain-source Clamp
Voltage= 200 mA Vin=0 60 70 80 V
VCLTH Drain-source Clamp
Threshold Voltage =2 mA Vin =0 55 V
VINCL Input-Source Reverse
Clamp Voltage
Iin =-1 mA -1 -0.3 V
IDSS Zero Input Voltage
Drain Current (Vin =0)
VDS =13V Vin =0
VDS =25V Vin =0
IISS Supply Current from
Input Pin
VDS =0V Vin=10V 250 500 μA(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VIN(th) Input Threshold
Voltage
VDS =Vin ID +Iin =1 mA 0.8 3 V
RDS(on) Static Drain-source On
Resistance
Vin =10V ID =18A
Vin =5V ID =18A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance
VDS =13V ID =18A 20 25 S
Coss Output Capacitance VDS= 13Vf= 1MHz Vin=0 980 1400 pF
VNP35N07FI-VNB35N07-VNV35N07
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (∗∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =28V Id =18A
Vgen =10V Rgen =10Ω
(see figure3)
td(on)
td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =28V Id =18A
Vgen =10V Rgen= 1000Ω
(see figure3)
(di/dt)on Turn-on Current Slope VDD =28V ID =18A
Vin =10V Rgen =10Ω A/μs Total Input Charge VDD =12V ID =18A Vin=10V 100 nC
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VSD (∗)Forward On Voltage ISD =18A Vin =0 1.6 V
trr(∗∗)
Qrr(∗∗)
IRRM(∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD=18A di/dt= 100 A/μs
VDD =30V Tj =25oC
(see test circuit, figure5)
PROTECTION
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Ilim Drain Current Limit Vin =10V VDS =13V
Vin =5V VDS =13V
tdlim(∗∗) Step Response
Current Limit
Vin =10V
Vin =5V
Tjsh(∗∗) Overtemperature
Shutdown
150 oC
Tjrs(∗∗) Overtemperature Reset 135 oC
Igf(∗∗) Fault Sink Current Vin =10V VDS =13V
Vin =5V VDS =13V
Eas(∗∗) Single Pulse
Avalanche Energy
startingTj =25o CVDD =20V
Vin =10V Rgen =1 KΩ L=10 mH
2.5 J
(∗) Pulsed: Pulse duration=300μs, duty cycle1.5%
(∗∗) Parameters guaranteedby design/characterization
VNP35N07FI-VNB35N07-VNV35N07
3/13
During normal operation, the Input pin is
electrically connectedto the gateof the internal
power MOSFET. The device then behaves likea
standard power MOSFET and can be usedasa
switch from DCto 50 KHz. The only difference
from the user’s standpointis thata small DC
current (Iiss) flows into the Input pinin orderto
supply the internal circuitry.
The device integrates: OVERVOLTAGE CLAMP PROTECTION:
internally setat 70V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This featureis mainly important when driving
inductive loads. LINEAR CURRENT LIMITER CIRCUIT: limits
the drain currentIdto Ilim whatever the Input
pin voltage. When the current limiteris active,
the device operatesin the linear region, so
power dissipation may exceed the capabilityof
the heatsink. Both case and junction
temperatures increase, andif this phase lasts
long enough, junction temperature may reach
the overtemperature threshold Tjsh. OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperature and are not dependenton
the input voltage. The locationof the sensing
element on the chipin the power stage area
ensures fast, accurate detectionof the junction
temperature. Overtemperature cutout occursat
minimum 150oC. The deviceis automatically
restarted when the chip temperature falls
below 135oC. STATUS FEEDBACK: In the case of an
overtemperature fault condition, a Status
Feedbackis provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connectsit insteadto
ground via an equivalent resistanceof 100Ω.
The failure can be detectedby monitoring the
voltageat the Input pin, which will be closeto
ground potential.
Additional features of this device are ESD
protection accordingto the Human Body model
and the abilityto be driven froma TTL Logic
circuit (witha small increasein RDS(on)).
PROTECTION FEATURES
VNP35N07FI-VNB35N07-VNV35N07
4/13
Thermal Impedance For ISOWATT220
Derating Curve
Transconductance
Thermal Impedance For D2PAK/ PowerSO-10
Output Characteristics
Static Drain-Source On Resistancevs Input
Voltage
VNP35N07FI-VNB35N07-VNV35N07
5/13
Static Drain-Source On Resistance
Input Chargevs Input Voltage
Normalized Input Threshold Voltage vs
Temperature
Static Drain-Source On Resistance
Capacitance Variations
Normalized On Resistancevs Temperature
VNP35N07FI-VNB35N07-VNV35N07
6/13
Normalized On Resistancevs Temperature
Turn-on Current Slope
Turn-off Drain-Source Voltage Slope
Turn-on Current Slope
Turn-off Drain-Source Voltage Slope
Switching Time Resistive Load
VNP35N07FI-VNB35N07-VNV35N07
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Partno	Mfg	Dc	Qty	Available	Descript
VNB35N07	ST	N/a	20	avai	"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET
VNP35N07FI	ST	N/a	21	avai	"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET