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VN88AFD
Enhancement-Mode MOSFET Transistors
VISHAY
2N6661NN88AFD
Vishay Siliconix
N-Channel 80-V and 90-V (D-S) MOSFETS
PRODUCT SUMMARY
Part Number V(BR)DS$ Min (V) rDS(on) Max (Q) vGS(th) (V) In (A)
2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9
VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29
FEATURES BENEFITS APPLICATIONS
q Low On-Resistance: 3.6 C2
q Low Threshold: 1.6V
T0-205AD
(TO-39)
Top View
2N6661
Low Input Capacitance: 35 pF
Fast Switching Speed: 6 ns
Low Input and Output Leakage
q Low OffsetVoltage
o Low-Voltage Operation
Easily Driven 1/Mthout Buffer
o High-Speed Circuits
q Low ErrorVoItage
Device Marking
Side VIew
2N6661
"S" fllxxyy
"S" = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy: Date Code
. DirectLogic-Level Interface: TTL/CMOS
0 Drivers: Relays, Solenoids, Lamps,
. Battery Operated Systems
. Solid-State Relays
Hammers, Displays, Memories, Transistors,
Device Marking
Front View
VN88AFD
"S'' xxyy
"S" = Siliconix Logo
xxyy = Date Code
TO-220SD D
(Tab-Drain)
S G D s
Front View N-Channel MOSFET
VN88AFD
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 2N6661 VN88AFD Unit
Drain-Source Voltage VDS 90 80 V
Gate-Source Voltage VGS $20 d: 30
Tc = 25°C 0.9 1.29
Continuous Drain Current (TJ = 150°C) ID
Tc = 100°C 0.7 0.81 A
Pulsed Drain Currenta IDM d: 3 i 3
Tc = 25°C 6.25 15
Power Dissipation PD W
Tc = 100°C 2.5 6
Thermal Resistance, Junction-to-Ambientb RNA 170
Thermal Resistance, Junction-to-Case RthJC 8.3
Operating Junction and Storage Temperature Range T J, Tsig -55 to 150 "C
a. Pulse width limited by maximumjunction temperature.
b. This parameter not registered with JEDEC.
DocumentNumber: 70224
S-04279-Rev. C, 16-Jul-01
www.vishay.com
2N6661NN88AFD
Vishay Siliconix
VISHAY
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
2N6661 VN88AFD
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, b = 10 11A 125 90 80
V03 = Vss, ID = 1 mA 1.6 0.8 2 0.8 2.5
Gate-Threshold Voltage VGS(th) T J = -55''C 1.8
T J = 125°C 1.3
VDs=0V,VGs=ce15V i100 i100
Gate-Bod Leaka e I nA
y g GSS TJ = 125°C i500 i500
VDs--90V,Vss--0V 10
VDS=80V,VGS=0V 10
Zero Gate Voltage Drain Current loss pt/k
Vros = 0.8 X V(BR)ross, VGS = 0 V 1
Tu = 125°C 500 500
VDS=15 V,VGS=1OV 1.8 1.5
On-State Drain Currentb low”) A
VDS=1O V,VGS=10V 1.8 1.5
VGS= 5V, ID=0.3A 3.8 5.3 5.6
Drain-Source On-Resistanceb rDS(on) VGS = 10 V, ID = 1 A 3.6 4 4 Q
T J = 125°C(1 6.7 9 8
Forward Transconductancdo gts Vos = 10 V, ID = 0.5 A 350 170 170 ms
Diode Forward Voltage VSD Is = 0.86 A, VGS = 0 V 0.9 V
Dynamic
Input Capacitance Ciss 35 50 50
Output Capacitance Coss Vos = 24 V, VGs = 0 V 15 40 40 pF
Reverse Transfer Capacitance Crss f= 1 MHz 2 10 10
Drain-Source Capacitance Cds 30 40
Switchingc
Turn-On Time ION VDD = 25 V, RL = 23 Q 6 10 15
|DE1AVVGEN=1OV ns
Turn-O/e tom: RG = 25 Q 8 10 15
a. For DESIGN AID ONLY, not subject to production testing. VNDQ09
Pulse test: PW 5300 p5 duty cycle 52%.
C. Switching time is essentially independent of operating temperature.
This parameter not registered with JEDEC.
www.vishay.com
DocumentNumber: 70224
S-04279-Reu. C, 16-Jul-01
VISHAY
2N6661NN88AFD
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
1.0 V'es = 10 v ,,,w''' wt'',''
0.8 m,,,,,-.''''"'"
/f, ',C,'V'-''' 5 v
E 0 6 / C,,,:,,",,',',' -
g . 'V''" 4 v
(i, o 4 l/j/C,,,,,,---
o V bf,
s', 3 V
0 1.0 2.0 3.0 4.0 5.0
I/ras - Drain-to-Source Voltage (V)
Transfer Characteristics
"I/ 5 C
0.1 VDS =15V -
0 2 4 6 8 10
l/as - Gate-Source Voltage (V)
On-Resistance vs. Drain Current
5 VGS = 10 V/
sk 4 w,,,..,,,,,----'""
I s,...---'"
"ic','" 2
0 0.5 1.0 1.5 2.0 2.5
ID - Drain Current (A)
roam) — On-Resistance ( £2 ) ID — Drain Current (mA)
rDs(on) — Drain-Source On-Resistance ( Q )
(Normalized)
Output Characteristics for Low Gate Drive
Vas = 3 v
0 0.4 0.8 1.2 1.6 2.0
V03 - Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0 4 8 12 16 20
I/ss - Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
_ VGS=10V /
-50 -1 0 30 70 110 150
T., - Junction Temperature (°C)
DocumentNumber: 70224
S-04279-Rev. C, 16-Jul-01
www.vishay.com
2N6661NN88AFD
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Threshold Region Capacitance
10 125 I
VGS = O V
l f=1 MHz
E 1 fi"
g g 75
o 8 Ciss
I 0.1 I 'm-...-,
25 'csc"''
Crss "'"""-------..........,
0.01 o """"es,
0.5 1.0 1.5 2.0 0 10 20 30 40 50
Vss - Gate-to-Source Voltage (V) Vos - Drain-to-Source Voltage (V)
Gate Charge Load Condition Effects on Switching
15.0 I 100
VDD = 25 v
lro=1.0A RL=23Q
12.5 VGs=0to10V
2 ID = 1.0 A
'l,'' 10.0 / Js'..
v = 45 v tst'"'''''" E
6 DS "e''.' F
g 7.5 o: 10
U? ws',','',''; F,
"r' 72 V =
iv we'',,',', 3
Iii 5.0 w
o t,',v''''''" I
I se',',',',',') -
f' 2.5 /
0 100 200 300 400 500
O5] - Total Gate Charge (pC) ID - Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Case (2N6661)
Duty Cycle = 0.5
Notes:
Single Pulse ,
0.05 -5 " _
--t2--
Thermal Impedance
l, Duty Cycle, D = T1
2. Per Unit Base = Rch = 20°CNV
Normalized Effective Transient
3. TJM - To = PDMZch“)
0.1 1.0 10 100 1 K 10K
t1 - Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70224
11-4 S-04279-Reu. C, 16-Jul-01
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