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VN820B5TR-E-VN820PTTR-E-VN820SPTR-E
HIGH SIDE DRIVER
VN820-E / VN820B5-E
VN820PT-E / VN820SO-E / VN820SP-E
HIGH SIDE DRIVER
Table 1. General Features
■ CMOS COMPATIBLE INPUT
■ ON STATE OPEN LOAD DETECTION
■ OFF STATE OPEN LOAD DETECTION
■ SHORTED LOAD PROTECTION
■ UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
■ PROTECTION AGAINST LOSS OF GROUND
■ VERY LOW STAND-BY CURRENT
■ REVERSE BATTERY PROTECTION (*)
■ IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
DESCRIPTION
The VN820-E, VN820SP-E, VN820B5-E,
VN820SO-E, VN820PT-E are monolithic devices
made by using STMicroelectronics VIPower M0-3
Technology, intended for driving any kind of load
with one side connected to ground.
Active VCC pin voltage clamp protects the device
against low energy spikes (see ISO7637 transient
compatibility table).
Figure 1. Package
Active current limitation combined with thermal
shutdown and automatic restart protect the device
against overload.
The device detects open load condition both is on
and off state. Output shorted to VCC is detected in
the off state. Device automatically turns off in case
of ground pin disconnection.
Table 2. Order Codes
Note: (*) See application schematic at page 9.
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
Figure 2. Block Diagram
Table 3. Absolute Maximum Ratings
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins
Figure 4. Current and Voltage Conventions
Table 4. Thermal Data
(1) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick).
(2) When mounted on FR4 printed circuit board with 0.5cm2 of Cu (at least 35µ thick) connected to all VCC pins.
(3) When mounted on a standard single-sided FR-4 board with 6cm2 of Cu (at least 35µm thick).
(4) When mounted on FR4 printed circuit board with 6cm2 of Cu (at least 35µ thick) connected to all VCC pins.
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
ELECTRICAL CHARACTERISTICS (8VTable 5. Power
Table 6. Switching (VCC =13V)
Table 7. Input Pin
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
ELECTRICAL CHARACTERISTICS (continued)
Table 8. VCC - Output Diode
Table 9. Status Pin
Table 10. Protections (see note 1)
Note:1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be
used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration
and number of activation cycles.
Table 11. Openload Detection
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
Figure 5.
Table 12. Truth Table
Figure 6. Switching time Waveforms
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
Table 13. Electrical Transient Requirements On VCC Pin
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
Figure 7. Waveforms
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
Figure 8. Application Schematic
GND PROTECTION NETWORK AGAINST
REVERSE BATTERY
Solution 1: Resistor in the ground line (RGND only). This
can be used with any type of load.
The following is an indication on how to dimension the
RGND resistor.
1) RGND ≤ 600mV / (IS(on)max).
2) RGND ≥ (−VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in RGND (when VCC<0: during reverse
battery situations) is:
PD= (-VCC)2 /RGND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where IS(on)max becomes the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the RGND will
produce a shift (IS(on)max * RGND) in the input thresholds
and the status output values. This shift will vary
depending on many devices are ON in the case of several
high side drivers sharing the same RGND.
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggests to utilize Solution 2 (see
below).
A resistor (RGND=1kΩ) should be inserted in parallel to
DGND if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (j600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected.
LOAD DUMP PROTECTION
Dld is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds VCC max DC rating.
The same applies if the device will be subject to
transients on the VCC line that are greater than the ones
shown in the ISO T/R 7637/1 table.
µC I/Os PROTECTION:
If a ground protection network is used and negative
transient are present on the VCC line, the control pins will
be pulled negative. ST suggests to insert a resistor (Rprot)
in line to prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up
limit of µC I/Os.
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax
Calculation example:
For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V
5kΩ ≤ Rprot ≤ 65kΩ.
Recommended Rprot value is 10kΩ.
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
OPEN LOAD DETECTION IN OFF STATE
Off state open load detection requires an external pull-up
resistor (RPU) connected between OUTPUT pin and a
positive supply voltage (VPU) like the +5V line used to
supply the microprocessor.
The external resistor has to be selected according to the
following requirements:
1) no false open load indication when load is connected:
in this case we have to avoid VOUT to be higher than
VOlmin; this results in the following condition
VOUT=(VPU/(RL+RPU))RL2) no misdetection when load is disconnected: in this
case the VOUT has to be higher than VOLmax; this
results in the following condition RPU<(VPU–VOLmax)/
IL(off2).
Because Is(OFF) may significantly increase if Vout is
pulled high (up to several mA), the pull-up resistor RPU
should be connected to a supply that is switched OFF
when the module is in standby.
The values of VOLmin, VOLmax and IL(off2) are available in
the Electrical Characteristics section.
Figure 9. Open Load detection in off state
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
Figure 10. Off State Output Current Figure 11. High Level Input Current
Figure 12. Input Clamp Voltage
Figure 13. Status Low Output Voltage
Figure 14. Status Leakage Current
Figure 15. Status Clamp Voltage
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
Figure 16. On State Resistance Vs Tcase Figure 17. On State Resistance Vs VCC
Figure 18. Openload On State Detection
Threshold
Figure 19. Input High Level
Figure 20. Openload Off State Voltage
Detection Threshold
Figure 21. Input Low Level
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
Figure 22. Turn-on Voltage Slope
Figure 23. Overvoltage Shutdown
Figure 24. Input Hysteresis Voltage
Figure 25. Turn-off Voltage Slope
Figure 26. ILIM Vs Tcase
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
Figure 27. PowerSO-10, P2 PAK, PENTAWATT Maximum turn off current versus load inductance
A = Single Pulse at TJstart=150ºC
B= Repetitive pulse at TJstart=100ºC
C= Repetitive Pulse at TJstart=125ºC
Conditions:
VCC=13.5V
Values are generated with RL=0Ω
In case of repetitive pulses, Tjstart (at beginning of
each demagnetization) of every pulse must not
exceed the temperature specified above for
curves B and C.
VIN, IL
Demagnetization Demagnetization Demagnetization
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
Figure 28. PPAK Maximum turn off current versus load inductance
A = Single Pulse at TJstart=150ºC
B= Repetitive pulse at TJstart=100ºC
C= Repetitive Pulse at TJstart=125ºC
Conditions:
VCC=13.5V
Values are generated with RL=0Ω
In case of repetitive pulses, Tjstart (at beginning of
each demagnetization) of every pulse must not
exceed the temperature specified above for
curves B and C.
VIN, IL
Demagnetization Demagnetization Demagnetization
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
Figure 29. SO-16L Maximum turn off current versus load inductance
A = Single Pulse at TJstart=150ºC
B= Repetitive pulse at TJstart=100ºC
C= Repetitive Pulse at TJstart=125ºC
Conditions:
VCC=13.5V
Values are generated with RL=0Ω
In case of repetitive pulses, Tjstart (at beginning of
each demagnetization) of every pulse must not
exceed the temperature specified above for
curves B and C.
VIN, IL
Demagnetization Demagnetization Demagnetization
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
SO-8 Thermal Data
Figure 30. SO-8 PC Board
Figure 31. Rthj-amb Vs PCB copper area in open box free air condition
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
SO-16L Thermal Data
Figure 32. SO-16L PC Board
Figure 33. SO-16L Rthj-amb Vs PCB copper area in open box free air condition
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E2 PAK Thermal Data
Figure 34. P2 PAK PC Board
Figure 35. P2 PAK Rthj-amb Vs PCB copper area in open box free air condition

Partno	Mfg	Dc	Qty	Available	Descript
VN820B5TR-E \|VN820B5TRE	ST	N/a	270	avai	HIGH SIDE DRIVER
VN820PTTR-E \|VN820PTTRE	ST	N/a	950	avai	HIGH SIDE DRIVER
VN820SPTR-E \|VN820SPTRE	STM	N/a	5000	avai	HIGH SIDE DRIVER