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VN800S-E
HIGH SIDE DRIVER
1/24October 2004
VN800S-E
VN800PT-E
HIGH SIDE DRIVER
Rev. 1
Table 1. General Features CMOS COMPATIBLE INPUT THERMAL SHUTDOWN CURRENT LIMITATION SHORTED LOAD PROTECTION UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN PROTECTION AGAINST LOSS OF GROUND VERY LOW STAND-BY CURRENT REVERSE BATTERY PROTECTION (*) IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
DESCRIPTION
The VN800S-E, VN800PT-E are monolithic
devices made by using STMicroelectronics
VIPower M0-3 Technology, intended for driving
any kind of load with one side connected to
ground.
Active VCC pin voltage clamp protects the device
against low energy spikes.
Figure 1. Package
Active current limitation combined with thermal
shutdown and automatic restart protect the device
against overload. Device automatically turns off in
case of ground pin disconnection. This device is
especially suitable for industrial applications in
norms conformity with IEC1131 (Programmable
Controllers International Standard).
Table 2. Order Codes
Note: (*) See application schematic at page 10.
VN800S-E / VN800PT-E
2/24
Figure 2. Block Diagram
Table 3. Absolute Maximum Ratings
3/24
VN800S-E / VN800PT-E
Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins
Figure 4. Current and Voltage Conventions
Table 4. Thermal Data1 ) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35μ thick) connected to all VCC pins.2 ) When mounted on FR4 printed circuit board with 2 cm2 of copper area (at least 35μ thick).3 ) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35μ thick) connected to all VCC pins.4 ) When mounted on FR4 printed circuit board with 6 cm2 of copper area (at least 35μ thick).
VN800S-E / VN800PT-E
4/24
ELECTRICAL CHARACTERISTICS (8VTable 5. Power
Table 6. Switching (VCC =24V)
Table 7. Input Pin
5/24
VN800S-E / VN800PT-E
ELECTRICAL CHARACTERISTICS (continued)
Table 8. VCC - Output Diode
Table 9. Status Pin
Table 10. Protections (see note 1)
Note:1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be
used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration
and number of activation cycles.
Figure 5.
VN800S-E / VN800PT-E
6/24
Table 11. Truth Table
Figure 6. Switching time Waveforms
7/24
VN800S-E / VN800PT-E
Table 12. Electrical Transient Requirements On VCC Pin
Figure 7. Peak Short Circuit Current Test Circuit
VN800S-E / VN800PT-E
8/24
Figure 8. Avalanche Energy Test Circuit
9/24
VN800S-E / VN800PT-E
Figure 9. Waveforms
VN800S-E / VN800PT-E
10/24
Figure 10. Application Schematic
GND PROTECTION NETWORK AGAINST
REVERSE BATTERY
Solution 1: Resistor in the ground line (RGND only). This
can be used with any type of load.
The following is an indication on how to dimension the
RGND resistor.
1) RGND ≤ 600mV / (IS(on)max).
2) RGND ≥ (−VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in RGND (when VCC<0: during reverse
battery situations) is:
PD= (-VCC)2 /RGND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where IS(on)max becomes the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the RGND will
produce a shift (IS(on)max * RGND) in the input thresholds
and the status output values. This shift will vary
depending on many devices are ON in the case of several
high side drivers sharing the same RGND.
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggests to utilize Solution 2 (see
below).
Solution 2: A diode (DGND) in the ground line.
A resistor (RGND=1kΩ) should be inserted in parallel to
DGND if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (j600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected.
μC I/Os PROTECTION:
If a ground protection network is used and negative
transients are present on the VCC line, the control pins will
be pulled negative. ST suggests to insert a resistor (Rprot)
in line to prevent the μC I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of μC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up
limit of μC I/Os.
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHμC-VIH-VGND) / IIHmax
Calculation example:
For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHμC ≥ 4.5V
5kΩ ≤ Rprot ≤ 65kΩ.
Recommended Rprot value is 10kΩ.
11/24
VN800S-E / VN800PT-E
Figure 11. Off State Output Current Figure 12. High Level Input Current
Figure 13. Status Leakage Current
Figure 14. On State Resistance Vs Tcase
Figure 15. On State Resistance Vs VCC
Figure 16. Input High Level
VN800S-E / VN800PT-E
12/24
Figure 17. Input Low Level
Figure 18. Turn-on Voltage Slope
Figure 19. Overvoltage Shutdown
Figure 20. Input Hysteresis Voltage
Figure 21. Turn-off Voltage Slope
Figure 22. ILIM Vs Tcase
