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VN800-VN800STR-E-VN800STR-E/
HIGH SIDE DRIVER
VN800S
VN800PT
HIGH SIDE DRIVER
TYPE RDS(on) IOUT Vcc
VN800S
135 mn 0.7 A 36 V
VN800PT
a CMOS COMPATIBLE INPUT
n THERMAL SHUTDOWN
:1 CURRENT LIMITATION
n SHORTED LOAD PROTECTION
n UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
n PROTECTION AGAINST LOSS OF GROUND
a VERY LOW STAND-BY CURRENT
I: REVERSE BATTERY PROTECTION (*)
DESCRIPTION
The VN800S, VN800PT are monolithic devices
made by using STMicroelectronics VIPower M0-3
Technology, intended for driving any kind of load
with one side connected to ground.
Active Vcc pin voltage clamp protects the device
against low energy spikes. Active current
limitation combined with thermal shutdown and
BLOCK DIAGRAM
§4] '5
ORDER CODES
PACKAGE TUBE T&R
SO-8 VN800S VN800S13TR
PPAK VN800PT VN800PT13TR
automatic restart protect the device against
overload. Device automatically turns off in case of
ground pin disconnection. This device is
especially suitable for industrial applications in
norms conformity with IEC1131 (Programmable
Controllers International Standard).
INPUT . _ Y-- LOGIC
STATUS E]—
OVERTEMPERATURE
DETECTION -
Vcc OVERVOLTAGE
CLAMP DETECTION
UNDERVOLTAGE
DETECTION
GND [3—
Power CLAMP
CURRENT LIMITER g
(*) See note at page 7
July 2004
Rev. 1
VN800S IVN800PT
ABSOLUTE MAXIMUM RATING
Value .
Symbol Parameter SO-8 PPAK Unit
Vcc DC Supply Voltage 41 V
- Vcc Reverse DC Supply Voltage - 0.3 V
- IGND DC Reverse Ground Pin Current - 200 mA
IOUT DC Output Current Internally Limited A
- IOUT Reverse DC Output Current - 6 A
IN DC Input Current +/- 10 mA
VIN Input Voltage Range -3/+VCC V
VSTAT DC Status Voltage + Vcc V
Electrostatic Discharge (Human Body Model: R=1.5KQ; C=100pF)
- INPUT 4000 V
VESD - STATUS 4000 V
- OUTPUT 5000 V
- Vcc 5000 v
Plot Power Dissipation TC=25°C 4.2 41.7 W
EMAX Maximum Switching Energy 121 mJ
(L=77.5mH; RL=OQ; Vbat=13-5Vi Tjstart=150°C; IL=1.5A)
Maximum Switching Energy
EMAX 195 mJ
(L=125mH; RL=OQ; Vbat=13.5V; Tjstan=150°C; IL=1.5A)
T, Junction Operating Temperature Internally Limited 'C
Tc Case Operating Temperature - 40 to 150 °C
Tstg Storage Temperature - 55 to 150 T
L Max Inductive Load (Vcc=30V; ILOAD=0.5A; Tamb=100°C; 2 H
max Rthcase>amsents25''C/W)
CONFIGURATION DIAGRAM (TOP VIEW) & SUGGESTED CONNECTIONS FOR UNUSED AND N.C.
Vcc n5 4 D N.C. C ti lPi St N.C Out l N : OUTPUT
OUTPUT n D STATUS T'.""''""' In atus . . u put nput O 3 E: STATUS
OUTPUT[ a INPUT Floating X X X X 2 _- INPUT
Vcc C 8 fl 1 l GND To Ground X Through10KQresistor 1 :2 GND
SO-8 PPAK
CURRENT AND VOLTAGE CONVENTIONS
STATUS J—_’ Vcc
2/22 gr,
